1) DST Depleted Substrate Transistor
衰竭型底层晶体管
2) depleted layer
衰竭层
1.
It is expounded that the increase of apparent viscosity or the decrease of depleted layer thickness generated by the overlap of HPAM molecules can increase the force parallel to oil-Water interface, which can pull mor.
通过实验测定了部分水解聚丙烯酰胺(HPAM)溶液在流变仪中的流变性及通过多孔介质的流变性和残余阻力系数,计算了衰竭层厚度,用不同的浓度、注入速度和岩芯渗透率进行了驱油实验。
2.
A calculation model for apparent viscosity of polymer solutions in porous media in the presence of both depleted layer effectiveness and visco?-elastic effectiveness was established.
实验测定了水解聚丙烯酰铵 (HPAM )溶液和黄原胶溶液的流变特性及其在多孔介质中的流变特性 ,建立了衰竭层效应和粘弹性效应共同存在条件下聚合物溶液在多孔介质中的表观粘度计算模型。
3.
The results show that with the concentration increase of Xanthan solution, the bulk viscosities increase, but residual resistance factors increase only when the concentrations are above overlap concentration, and in this case the depleted layer t.
结果表明 :随浓度增加 ,黄原胶溶液的体相黏度增加 ,浓度高于缠结浓度时 ,残余阻力系数随浓度的增加而增加 ,但衰竭层厚度、表观黏度和提高采收率的幅度变化不大 ,同低于缠结浓度的情况相比 ,采收率保持较高的数值 ,最佳的黄原胶驱浓度应稍高于缠结浓度。
3) depleted reservoir
衰竭产层
5) maternal depletion
母体衰竭
6) PNP substrate transistor
衬底PNP型双极型晶体管
1.
The temperature related model and the influencing factor of two temperature sensing devices, subthreshold MOSFET and PNP substrate transistor, based on CMOS process were analyzed and compared, and pointed out that the PNP substrate .
对CMOS工艺下的两种感温元件,即亚阈值工作状态下的金属场效应晶体管(MOSFET)及衬底PNP型双极型晶体管(BJT)的温度模型和影响因素进行了分析和比较,指出了衬底PNP型BJT更适合作为温度传感器的温度敏感元件。
补充资料：衰竭
衰竭
由于疾病严重而生理机能极度减弱。例如心力衰竭、全身衰竭。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条