1) Single crystal silicon
硅单晶
1.
Radiation effects and stability hardening of single crystal silicon on space solar cell;
空间太阳电池硅单晶的辐射效应及加固
2.
Hydrogen on the surface of single crystal silicon has been introduced bycathodic charing.
利用阴极充氢法，向硅单晶表面注入氢离子，用化学浸蚀法观察晶体表面氢与层错间的相互作用层错，特别是Frank半位错在硅单晶表面的露头处是原子氢的择优聚集区，原子氢化合成分子氢后能诱发大的晶格畸变利用化学浸蚀法，观察到了氢与层错的相互作
2) Silicon single crystal
硅单晶
1.
The properties of potential barrier at the contact between a silicon single crystal with built-in phosponus and aluminium are studied using time domain differential dielectric spectroscopy.
用微分时域介电谱方法在液氮温度下研究了掺磷硅单晶和铝接触界面势垒层的性质。
2.
A new method which can nondestructively measure, then estimate the capture cross sections of surface state σ o n and σ - p (or σ n + and σ p 0) of silicon single crystal is proposed.
此法基于变温光伏测量 ,采用 (111) p型硅单晶 (NA =1。
4) Si crystal
硅单晶
1.
P-type conductive Si crystals were grown with resistivity of(3～5)×103 Ω·cm or(1～2)×104 Ω·cm.
介绍了高阻真空区熔硅单晶的研制工艺,研制出了导电类型为p型,电阻率(3～5)×103Ω。
2.
With experiments of high resistance n〈111〉 Si crystal grouth ,we found that theseed rotation rate ,lift rate and thermal convection could affect the uniformity of radial resistivity inn〈111〉Silicon crystal .
通过不同工艺的拉晶实验,发现晶转、拉速、热对流等因素对高阻n〈111〉硅单晶径向电阻率均匀性有所影响。
5) silicon crystal
硅单晶
1.
The technical control of 300mm silicon crystal is discussed,and the effects of the technical parameters,heat shield and CUSP magnetic field on the crystal growth is analysed.
讨论了 30 0 mm硅单晶的工艺控制 ,分析了拉晶工艺、热屏及磁场对晶体质量的影响。
6) seed of single crystal silicon
单晶硅籽晶
补充资料：硅单晶
硅单晶
硅单晶 《有色金属研究总院》
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条