1) small gap materia
窄禁带材料
2) low bandgap material
窄带隙材料
3) Wide-band gap material
宽禁带材料
4) bandgap narrowing
禁带变窄
1.
The bandgap narrowing is distributed between the conduction and valence bands,according to the Jain-Roulston model,and its effects on the currents of abrupt AlGaAs/GaAs HBTs including the self-heating effect,are analyzed.
基于禁带变窄量在导带和价带之间的分布比例与掺杂浓度相关的Jain-Roulston模型,研究了重掺杂能带结构的变化对突变异质结HBT电流影响。
6) narrow gap region
窄禁带区
补充资料:修禁
1.禁止。
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