1) gate pinch-off voltage
栅夹断电压
2) pinch off voltage
夹断电压
1.
Investigation of the pinch off voltage of SiC-MESFET;
SiC-MESFET器件的夹断电压
2.
The effects of parameters such as temperature,acceptor density,and activation rate on channel depth a,pinch off voltage are studied.
考虑离子注入沟道和沟道深度的影响 ,提出了精确的离子注入 4 H- Si C MESFET器件夹断电压的理论计算方法 。
3) pinch-off voltage
夹断电压
1.
It is studied that the influence of AB microdefects in semi-insulating GaAs substrate grown by LEC on the property of MESFET devices including transconductance (g m),saturated drain current (I dss),and pinch-off voltage (V p) .
研究了LEC法生长SI GaAs衬底上的AB微缺陷对相应的MESFET器件性能 (跨导、饱和漏电流、夹断电压 )的影响 。
2.
On the grounds of the pinch-off voltage, the cut-off point of variable resistance area and saturation area can be fixed, so the field effect tube can reliably work in the saturation area.
根据夹断电压能确定可变电阻区与饱和区的分界点,使场效应管可靠地工作在饱和区的原理。
3.
This paper analyses a model of effect of EL2 level of GaAs MESFETs pinch-off voltage, find out that the level under the intrinsic Feimi levels are the major factors which effect the GaAs MESFETs pinch-off voltage, relation between the levels density and the effect factor(γ) is linear.
在建立的理论模型基础之上 ,定量地分析了EL2能级对GaAsMESFET夹断电压的影响 ,指出位于本征费米能级以下的EL2能级是影响GaAsMESFET夹断电压大小的主要因素 ,EL2能级对GaAsMESFET夹断电压的影响程度与EL2能级的缺陷密度呈线性关系。
4) pinched resistor
夹断电阻
5) drain-to-gate voltage
栅漏电压
6) screen-grid voltage
屏栅(电)压
补充资料：夹叙夹议
1.边叙述边议论。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条