1) piezoelectric inclusion
压电夹杂
1.
In this paper, an un-circular piezoelectric inclusion embedded in an infinite piezoelectric matrix is analysed in the framework of linear piezoelectricity.
本文以椭圆夹杂为例，讨论了在线性压电学范围内的无限压电基体内嵌有非圆形压电夹杂的反平面问题。
2) Electrolysed inclusion
电解夹杂
3) pinch off voltage
夹断电压
1.
Investigation of the pinch off voltage of SiC-MESFET;
SiC-MESFET器件的夹断电压
2.
The effects of parameters such as temperature,acceptor density,and activation rate on channel depth a,pinch off voltage are studied.
考虑离子注入沟道和沟道深度的影响 ,提出了精确的离子注入 4 H- Si C MESFET器件夹断电压的理论计算方法 。
4) PZTs layer
压电夹层
1.
PZTs layer technique for aerocraft structure health monitoring;
航空结构健康监测的压电夹层设计
5) pinch-off voltage
夹断电压
1.
It is studied that the influence of AB microdefects in semi-insulating GaAs substrate grown by LEC on the property of MESFET devices including transconductance (g m),saturated drain current (I dss),and pinch-off voltage (V p) .
研究了LEC法生长SI GaAs衬底上的AB微缺陷对相应的MESFET器件性能 (跨导、饱和漏电流、夹断电压 )的影响 。
2.
On the grounds of the pinch-off voltage, the cut-off point of variable resistance area and saturation area can be fixed, so the field effect tube can reliably work in the saturation area.
根据夹断电压能确定可变电阻区与饱和区的分界点,使场效应管可靠地工作在饱和区的原理。
3.
This paper analyses a model of effect of EL2 level of GaAs MESFETs pinch-off voltage, find out that the level under the intrinsic Feimi levels are the major factors which effect the GaAs MESFETs pinch-off voltage, relation between the levels density and the effect factor(γ) is linear.
在建立的理论模型基础之上 ,定量地分析了EL2能级对GaAsMESFET夹断电压的影响 ,指出位于本征费米能级以下的EL2能级是影响GaAsMESFET夹断电压大小的主要因素 ,EL2能级对GaAsMESFET夹断电压的影响程度与EL2能级的缺陷密度呈线性关系。
6) voltage included angle
电压夹角
补充资料：GCr15钢中的大型非金属夹杂物(铝酸盐)×500
GCr15钢中的大型非金属夹杂物(铝酸盐)×500
GCrl5钢中的大型非金属夹杂物(铝酸盐) ×500
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条