1) resist thickness uniformity
抗蚀剂膜厚均质性
2) thick resist
厚层抗蚀剂
1.
The characteristics of thick resist lithography technique different from those of traditional technique are analyzed on the principle of lithography process and computer simulations.
厚层抗蚀剂光刻是一种制作深浮雕结构的微细加工技术。
2.
: During the fabrications of MEMS with thick resist lithography technique, most elements need better line width and vertical sidewall, so rigorous control of exposure dose and development time is necessary to get better patterns.
DILL曝光模型和MACK显影模型,编制了接触式曝光系统的厚层抗蚀剂光刻模拟软件,用其分析在理想曝光剂量条件下,抗蚀剂显影后的线宽和侧壁陡度随显影时间的变化规律,分析得出了给定厚度的抗蚀剂的显影时间,为实验工艺上严格控制显影时间提供依据。
3.
Recently, lithograph of thick resist has been regarded as an effective and economical technology for manufacturing excellent high-aspect-ratio microstructures (HARMS).
近年来，作为制作优质大高宽比微结构的厚层抗蚀剂光刻术以其工艺简单、制作成本低等优点受到国际上广泛重视。
3) thick photoresist
厚层抗蚀剂
1.
Considered the nonlinear factors existing in the exposure process of thick photoresist,an enhanced Dill model for thick photoresist is proposed,which improves the original Dill model and modifies the definition of Dill exposure parameters.
针对厚层抗蚀剂曝光过程中存在诸非线性因素的影响,更新Dill曝光参数的定义,建立了适合描述厚层抗蚀剂曝光过程的增强Dill模型。
4) Uniformity of quality and thickness
品质和膜厚均匀性
5) dry film resist
干膜抗蚀剂
6) thickness uniformity
膜厚均匀性
1.
The film thickness uniformity is an important reflection of the film quality and the device performance.
在自行设计的磁控溅射沉积设备上,对薄膜沉积工艺中靶基间距、溅射功率、工作气压对膜厚均匀性的影响进行了研究,由连续光谱椭圆偏光仪SE800测量薄膜厚度。
2.
To improve the thickness uniformity of thin films deposited by magnetron sputtering process,the substrate is rotated off its axis in relation to magnetron target.
溅射原子的角分布、溅射环的宽度以及膜厚均匀性要求都会影响该线性关系。
3.
Film thickness uniformity used in big area optical film for outdoor lighting is required higher.
采用平面公自转行星夹具镀制户外照明用大面积光学薄膜,分析计算了光学薄膜膜厚的均匀性,探讨各个参数对膜厚均匀性的影响,经测试分析,得到理论偏差和实际偏差结果。
补充资料：X射线抗蚀剂
分子式：
CAS号：
性质：采用软X射线（波长0.4～5nm）作为曝光源的抗蚀剂。由于X射线波长较紫外波长短两个数量级，几乎没有衍射的干扰，而且因其能量比电子束小得多，可以获得高分辨率，X射线对尘埃的透过性好，曝光工艺的缺陷率就低。所有的电子束抗蚀剂均可作X射线抗蚀剂。
CAS号：
性质：采用软X射线（波长0.4～5nm）作为曝光源的抗蚀剂。由于X射线波长较紫外波长短两个数量级，几乎没有衍射的干扰，而且因其能量比电子束小得多，可以获得高分辨率，X射线对尘埃的透过性好，曝光工艺的缺陷率就低。所有的电子束抗蚀剂均可作X射线抗蚀剂。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条