1) Thick resist exposure model
厚层抗蚀剂曝光模型
2) photoresist exposure
抗蚀剂曝光
1.
The simulation of the photoresist exposure and that of aerial images of photolithography systems are tightly correlated with each other.
抗蚀剂曝光的模拟与光刻系统空间像模拟紧密相连 ,一般是用标量衍射方法在特殊几何形状的光源分布和特殊掩摸结构的条件下计算的 ,实质是一定边界条件和初始条件下 Maxwell方程组的求解。
2.
The calculating result to photoresist exposure indicates the computing technique is feasible.
对抗蚀剂曝光的计算结果表明这种技术是有效的 。
3) thick resist
厚层抗蚀剂
1.
The characteristics of thick resist lithography technique different from those of traditional technique are analyzed on the principle of lithography process and computer simulations.
厚层抗蚀剂光刻是一种制作深浮雕结构的微细加工技术。
2.
: During the fabrications of MEMS with thick resist lithography technique, most elements need better line width and vertical sidewall, so rigorous control of exposure dose and development time is necessary to get better patterns.
DILL曝光模型和MACK显影模型,编制了接触式曝光系统的厚层抗蚀剂光刻模拟软件,用其分析在理想曝光剂量条件下,抗蚀剂显影后的线宽和侧壁陡度随显影时间的变化规律,分析得出了给定厚度的抗蚀剂的显影时间,为实验工艺上严格控制显影时间提供依据。
3.
Recently, lithograph of thick resist has been regarded as an effective and economical technology for manufacturing excellent high-aspect-ratio microstructures (HARMS).
近年来，作为制作优质大高宽比微结构的厚层抗蚀剂光刻术以其工艺简单、制作成本低等优点受到国际上广泛重视。
4) thick photoresist
厚层抗蚀剂
1.
Considered the nonlinear factors existing in the exposure process of thick photoresist,an enhanced Dill model for thick photoresist is proposed,which improves the original Dill model and modifies the definition of Dill exposure parameters.
针对厚层抗蚀剂曝光过程中存在诸非线性因素的影响,更新Dill曝光参数的定义,建立了适合描述厚层抗蚀剂曝光过程的增强Dill模型。
5) resist model
抗蚀剂模型
6) photoresist coatings
光阻抗蚀剂涂层
补充资料：X射线抗蚀剂
分子式：
CAS号：
性质：采用软X射线（波长0.4～5nm）作为曝光源的抗蚀剂。由于X射线波长较紫外波长短两个数量级，几乎没有衍射的干扰，而且因其能量比电子束小得多，可以获得高分辨率，X射线对尘埃的透过性好，曝光工艺的缺陷率就低。所有的电子束抗蚀剂均可作X射线抗蚀剂。
CAS号：
性质：采用软X射线（波长0.4～5nm）作为曝光源的抗蚀剂。由于X射线波长较紫外波长短两个数量级，几乎没有衍射的干扰，而且因其能量比电子束小得多，可以获得高分辨率，X射线对尘埃的透过性好，曝光工艺的缺陷率就低。所有的电子束抗蚀剂均可作X射线抗蚀剂。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条