1) critical field resistance
临界磁场电阻
2) critical magnetic field
临界磁场
1.
The binding energies of low excited states and the critical magnetic fields at which D- states changed from unbound states to bound states are presented too.
用超球坐标数值计算近似方法解二维D-中心在磁场中的薛定锷方程,得到了基态能,计算了低激发态的束缚能同时得到了低激发态由非束缚态变为束缚态的临界磁场值。
2.
On the basis of GL theory,this paper gives the Gibbs function of DSC system and the relation between the critical magnetic field of DSC system in case of microwave irradiation and both the coherence length and the thickness of dielectric under considering the Josephson current.
在ＧＬ理论基础上，考虑Ｊｏｓｅｐｈｓｏｎ电流，给出ＤＳＣ系统在微波辐照下的Ｇｉｂｂｓ函数，并得出临界磁场与绝缘层的厚度、相干长度的关
3.
The unstable magnetization changes discontinuously when across a critical value,corresponding to a critical magnetic field.
这个不稳定的磁化强度对应于一个临界磁场,低温时外场变化经过临界磁场时磁化强度发生突变。
3) critical field
临界电场
1.
After having considered the repelling action, the obtained critical field, has relation to the repelling action among particles as well as to temperature and dielectric constant.
考虑了排斥作用后 ,所求出的临界电场 ,除了与温度和介电常数有关外 ,还与颗粒之间的排斥作用有关 ,弥补了以前讨论中存在的不足 。
4) Upper critical field
上临界磁场
5) upper critical magnetic field
高临界磁场
6) lower critical field
下临界磁场
补充资料：各向异性第二临界磁场（anisotropicsecondcriticalmagneticfield）
各向异性第二临界磁场（anisotropicsecondcriticalmagneticfield）
在主轴坐标系中，设磁场平行于主轴Z，由各向异性GL方程给出的各向异性第二临界磁场为
Hc2∥(T)=`\frac{2|\alpha(T)|(m_1^\**m_2^\**)^{1/2}}{\mu_0\hbare^\**}`
$=sqrt{2K_1K_2}H_c(T)$
这里α(T)为GL自由能密度展式系数，mμ*和Kμ(μ=1,2,3)分别为库珀对有效质量和GL参量的μ分量，e*为库珀电子对电荷量，$hbar$是除以2π的普朗克常数，μ0是真空磁导率，Hc(T)为热力学临界磁场。对层状结构氧化物超导体，GL参量Ka≈Kb=Kab，并有
Hc2∥(T)=$sqrt2K_{ab}H_c(T)$
Hc2⊥(T)=$(2K_{ab}K_c)^{1/2}H_c(T)$
Hc2∥和Hc2⊥分别为磁场与主轴Z（或晶轴C）平行和垂直时的第二临界磁场，其物理性质含义参见“第二临界磁场”。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条