1) critical magnetic field H_(c1)
第一临界磁场Hc1
1.
At last,it through flux quantum gains the relation of critical magnetic field H_(c1).
对于单位磁通线BV=BS=Φ=0则可计算出高κ近似下的第一临界磁场Hc1,并进一步求出hc1。
2) second critical field
第二临界磁场
3) critical magnetic field
临界磁场
1.
The binding energies of low excited states and the critical magnetic fields at which D- states changed from unbound states to bound states are presented too.
用超球坐标数值计算近似方法解二维D-中心在磁场中的薛定锷方程,得到了基态能,计算了低激发态的束缚能同时得到了低激发态由非束缚态变为束缚态的临界磁场值。
2.
On the basis of GL theory,this paper gives the Gibbs function of DSC system and the relation between the critical magnetic field of DSC system in case of microwave irradiation and both the coherence length and the thickness of dielectric under considering the Josephson current.
在ＧＬ理论基础上，考虑Ｊｏｓｅｐｈｓｏｎ电流，给出ＤＳＣ系统在微波辐照下的Ｇｉｂｂｓ函数，并得出临界磁场与绝缘层的厚度、相干长度的关
3.
The unstable magnetization changes discontinuously when across a critical value,corresponding to a critical magnetic field.
这个不稳定的磁化强度对应于一个临界磁场,低温时外场变化经过临界磁场时磁化强度发生突变。
4) first critical angle
第一临界角
5) Upper critical field
上临界磁场
6) upper critical magnetic field
高临界磁场
补充资料：临界磁场（criticalmagneticfield）
临界磁场（criticalmagneticfield）
在外磁场H中将正常态第一类超导体冷却到临界温度Tc(H)时，样品即开始转入超导态（见“迈斯纳效应”）。对可逆迈斯纳效应，意味着在T＜Tc温度下也对应着开始破坏超导电性的磁场Hc(T)，称临界磁场，这里又称热力学临界磁场。它的经验公式可写为：
`H_c(T)=H_c(0)[1-(\frac{T}{T_c})^2]`
这里Hc(0)是T=0K时的临界磁场。这类相变属一级相变。对第二类超导体，则尚有第一，第二和第三临界磁场。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条