1) built-in voltage
内建电压
2) built-in voltagetranslation
内建电压位移
3) built-in drift voltage
内建漂移电压
4) built-in electric field
内建电场
1.
The second-harmonic generation(SHG) susceptibility of a wurtzite GaN/InxGa1-xN coupling quantum well(CQW) with strong built-in electric field was theoretically investigated.
理论考察了存在强内建电场的纤锌矿GaN/InxGa1-xN耦合量子阱体系的二次谐波产生(SHG)特性,结果发现共振SHG系数达到了10-7m/V的量级,SHG系数对耦合量子阱的结构与掺杂组份呈现非单调的依赖关系。
2.
A model for the built-in electric field in the base is developed and calculated analytically.
采用解析的方法计算了在基区掺杂为高斯分布,Ge组分分布为三角形分布和矩形三角形分布时基区内建电场的变化情况。
5) build-in internal electric field
内建电场
1.
The effects of the anisotropy of the wurtzite structure on the strain and the hydrostatic deformation potential are considered, including the build-in internal electric field.
考虑了纤锌矿结构材料的各向异性造成的内建电场的作用以及各向异性造成的应变张量和静压形变势与各向同性材料的差别。
2.
The build-in internal electric field caused by the anisotropy of wurtzite structure has been considered.
考虑了纤锌矿结构材料的各向异性造成的内建电场的作用,计算了 GaN/GaAlN量子阱内电子的激发态极化。
6) built in electric field
内建电场
1.
In principle, a mechanical signal can influence the distribution of strains in a nanostructure; a built in electric field can be produced from the variation of the strain distribution in certain conditions; the built in electric field will result in a variation of quantum states of electrons in nanosystems and the resonant tunne.
原理上讲 ,在力学信号作用下 ,纳米结构中的应力分布会发生变化 ;应力变化可引起内建电场的产生 ;内建电场将导致纳米结构中量子能态发生改变 ;量子能态改变会引起共振隧穿电流的变化。
2.
The potential profiles of MQW will be changed due to built in electric fields, from square wells into sloped wells, which lead to the increments of band offsets.
内建电场会改变多量子阱的结构 ,使其由方阱变为斜阱 ,导致其带阶发生改变。
补充资料：标准操作冲击电压波形(见冲击电压发生器)
标准操作冲击电压波形(见冲击电压发生器)
standard switching impulse voltage waveform
b .oozhun CooZuo ChongJld，onyo boxlng标准操作冲击电压波形(standard switchingimpulse voltage waveform)见冲击电压发生器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条