2) Auger electron spectroscopy (AES)
俄歇电子能谱
1.
In this study, the Auger Electron Spectroscopy (AES) was used to study the adsorption process and initial stage of oxidation reactions on clean surface of pure iron,uranium and surface of their C~+ ion-implanted samples.
本文利用俄歇电子能谱(AES)研究了清洁纯铁、离子注入碳纯铁、清洁铀以及离子注入碳铀表面与氧气吸附及初始氧化的过程。
4) Auger electron spectroscopy
俄歇电子能谱
1.
The interface diffusion and reaction of the film were studied by using Auger electron spectroscopy (AES) depth profile and line shape analysis.
利用扫描俄歇电子能谱(AES)的表面成分分析、深度剖析和线形分析技术研究了热处理温度对Ta_2O_5/Si样品膜层和基底的界面化学状态和相互作用的影响规律。
2.
Interaction between U and Al, and growth mode were investigated by Auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS).
在俄歇电子能谱(AES)仪超高真空分析室中利用氩离子溅射沉积方法将Al沉积在U基体上。
3.
Auger electron spectroscopy (AES) analysis shows there is a significant diffusion and chemical reactions take place in the interface between metal uranium and aluminum film produced with circulated argon ion bombardment process, which results in the formation of UAl 3 and Al 2O 3 phases.
俄歇电子能谱分析结果表明 :循环氩离子轰击镀获得的铝薄膜和铀基体的界面扩散比未循环轰击镀的显著增强 ,且界面发生化学反应 ,生成了UAl3和Al2 O3相。
5) auger electron spectroscopy(AES)
俄歇电子能谱(AES)
6) AES
俄歇电子能谱
1.
A NEW METHOD FOR COMPENSATION OF THE CHARGING OF OXIDES DURING AES;
消除俄歇电子能谱实验中氧化物表面荷电的新方法
2.
XPS AND AES INVESTIGATION OF GaN FILMS GROWN BY MBE;
分子束外延GaN薄膜的X射线光电子能谱和俄歇电子能谱研究
补充资料：俄歇电子
分子式：
CAS号：
性质：由俄歇效应发射的电子
CAS号：
性质：由俄歇效应发射的电子
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条