2) AES
俄歇电子谱
1.
XPS and AES Investigation of GaN Films Grown by MBE;
MBE生长氮化镓薄膜的X光电子谱和俄歇电子谱分析(英文)
2.
It is well known that low energy ion sputtering plaps an important role in quantification of surface composition by AES and XPS,such as to clean surface contamination and obtain depth profiles by low energy ion beam sputtering,ect.
由于离子溅射改变了固体表面化学成分，引起表面成分的再分布，使俄歇电子谱、X射线光电子谱以及二次离子质谱等表面分析手段，对溅射后固体表面成分的定量分析结果与实际结果有较大的差别。
3) Auger electron spectroscopy (AES)
俄歇电子能谱
1.
In this study, the Auger Electron Spectroscopy (AES) was used to study the adsorption process and initial stage of oxidation reactions on clean surface of pure iron,uranium and surface of their C~+ ion-implanted samples.
本文利用俄歇电子能谱(AES)研究了清洁纯铁、离子注入碳纯铁、清洁铀以及离子注入碳铀表面与氧气吸附及初始氧化的过程。
5) Auger electron spectroscopy
俄歇电子能谱
1.
The interface diffusion and reaction of the film were studied by using Auger electron spectroscopy (AES) depth profile and line shape analysis.
利用扫描俄歇电子能谱(AES)的表面成分分析、深度剖析和线形分析技术研究了热处理温度对Ta_2O_5/Si样品膜层和基底的界面化学状态和相互作用的影响规律。
2.
Interaction between U and Al, and growth mode were investigated by Auger electron spectroscopy (AES) and electron energy loss spectroscopy (EELS).
在俄歇电子能谱(AES)仪超高真空分析室中利用氩离子溅射沉积方法将Al沉积在U基体上。
3.
Auger electron spectroscopy (AES) analysis shows there is a significant diffusion and chemical reactions take place in the interface between metal uranium and aluminum film produced with circulated argon ion bombardment process, which results in the formation of UAl 3 and Al 2O 3 phases.
俄歇电子能谱分析结果表明 :循环氩离子轰击镀获得的铝薄膜和铀基体的界面扩散比未循环轰击镀的显著增强 ,且界面发生化学反应 ,生成了UAl3和Al2 O3相。
6) auger electron spectroscopy(AES)
俄歇电子能谱(AES)
补充资料：歇
歇 歇 又称歇经。见郑栋庵《女科经验方传灯》。指室女初潮后，复又闭经，但其面色不改，饮食如常，身无病状者，名曰歇。不属病态，不久经能自来。
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参考词条