1) nitride gate
氮化硅栅
2) Nitrogen-doped Gate Dielectric
掺氮栅氧化硅
3) SiO_xN_y gate dielectric
氮氧硅栅介质
5) silicon nitride
氮化硅
1.
Preparation of silicon nitride powder by a direct nitridation process based on fluidization technology;
基于流态化技术硅粉直接氮化制备氮化硅粉
2.
High-temperature fatigue behavior in pre-cracked silicon nitride composites doped with ytterbium oxide;
Yb_2O_3掺杂氮化硅复合材料的高温动态疲劳行为
6) Si3N4
氮化硅
1.
Machining Characters of HSWEDM Assisting Electrode Method Machining Insulated Ceramics Si3N4;
绝缘陶瓷氮化硅高速走丝线切割加工技术研究
2.
Experimental Research on ELID Precision Grinding of the Si3N4;
氮化硅材料的ELID精密磨削试验研究
3.
Si3N4 bonded SiC product was prepared by firing at 1?380?℃ for 5?h under nitrogen atmosphere with SiC,FeSi and Si powder as principal raw materials.
以碳化硅(SiC)、硅铁(FeSi)粉、硅(Si)粉为主要原料,在氮气气氛下1 380℃保温5 h制得氮化硅结合碳化硅制品,研究了硅铁粉加入量对试样常温力学性能的影响。
补充资料：十八烷氧基封端二甲基(硅氧烷与聚硅氧烷)
CAS：68554-53-0
中文名称：十八烷氧基封端二甲基(硅氧烷与聚硅氧烷)
英文名称：Siloxanes and Silicones, di-Me, (octadecyloxy)-terminated
中文名称：十八烷氧基封端二甲基(硅氧烷与聚硅氧烷)
英文名称：Siloxanes and Silicones, di-Me, (octadecyloxy)-terminated
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条