1) deep UV resist
深紫外光致抗蚀剂
2) UV photoresist
紫外光致抗蚀剂
1.
So,the article introduces several important UV photoresists and their development in recent years.
本文介绍了近年来几种主要的紫外光致抗蚀剂及其研究进展,对ArF激基体激光(193nm)光致抗蚀剂的各个组分进行了归纳综述。
3) Photoresists
光致抗蚀剂
1.
The importance of photoresists in microelectronic industry is described in this review,emphasizing the characteristics of polysilane photoresists and the developing situation of ultra violet, deep ultraviolet, X-ray,electron-beam polysilane photoresists etc.
概述了光致抗蚀剂在微电子工业中的作用,着重介绍了聚硅烷光致抗蚀剂的特点,以及聚硅烷紫外、深紫外、X射线、电子未等抗蚀剂的发展状
2.
Polysilynes, a new kind of high-performance materials, are reviewed on the present investigation of their synthesis, structure, reactions and applications as semiconductors, conductive SiC thin films, optical waveguides and photoresists.
本文综述了一类新型的高功能材料——聚硅炔的合成、结构、反应以及作为半导体、导电性SiC薄膜、光学波导器和光致抗蚀剂的应用的研究现状。
4) photoresist
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光致抗蚀剂
1.
Preparation of Cresol-formaldehyde Resins Used for Making Positive Photoresist;
正性光致抗蚀剂用酚醛树脂的制备
2.
Research progress and application status of UV positive photoresist;
紫外正性光致抗蚀剂的研究进展及应用现状
3.
Experiments on two-photon Optical storage in photoresist;
以光致抗蚀剂为记录介质的双光子存储实验
5) near uv resist
近紫外线抗蚀剂
6) positive photoresist
正型光致抗蚀剂
1.
This paper focuses on the positive photoresist’s application performance influence that the graft matrix and 2,1,5-sulfonylchloride(2-azo-1-naphthoquinone-5-sulfonyl chloride)(NDQ),which are used for composing LCD positive photoresist sensitive resin(PAC).
本文研究了液晶显示器件(LCD)正型光致抗蚀剂用感光树脂(PAC)所需接枝母体和2,1,5-重氮萘醌磺酰氯(NDQ)对正型光致抗蚀剂应用性能的影响。
补充资料：深紫外光致抗蚀剂
分子式：
CAS号：
性质：利用波长为200～300nm的深紫外线进行光刻的抗蚀剂，由于波长短，可减少衍射效应，深紫色光刻的分辨率可达0.5μm，但实际分辨率约为1～1.5μm。说来利用辐射化学原理的电子束或X射线抗蚀剂均可用作深紫外抗蚀剂。
CAS号：
性质：利用波长为200～300nm的深紫外线进行光刻的抗蚀剂，由于波长短，可减少衍射效应，深紫色光刻的分辨率可达0.5μm，但实际分辨率约为1～1.5μm。说来利用辐射化学原理的电子束或X射线抗蚀剂均可用作深紫外抗蚀剂。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条