1) MIS tunnel junction
MIS隧道结
2) MIM and MIS junctions
MIM及MIS隧道结
3) MIS tunnel diode
MIS隧道二极管
4) tunnel junctions
隧道结
1.
Tunnel magnetic resistance in ferromagnetic/semiconductor/ferromagnetic tunnel junctions;
铁磁/半导体/铁磁隧道结中的隧穿磁电阻
2.
This article describes the main growth methods of MgB_2 thin/thick films since the superconductivi- ty of MgB_2 had been discovered,including the comparisons of substrates and annealing processes,and summarizes the research progress of fabricating MgB_2 tunnel junctions briefly.
介绍了自 MgB_2超导电性被发现以来,用于制备 MgB_2薄膜/厚膜的各种基片、主要生长方法以及退火工艺,简单概述了薄膜制作超导隧道结方面的研究状况。
3.
A trapezoidal barrier potential was used to model Al Al 2O 3 ferromagnetic metal (Fe, Co, Ni and Ni 80 Fe 20 ) biased tunnel junctions.
用梯形势垒模型计算偏置Al Al2 O3 铁磁金属 (Fe ,Co ,Ni和Ni80 Fe2 0 )隧道结的I V曲线 ,通过与结在 77K温度下的实验I V曲线拟合决定了结的势垒参数 。
5) Tunnel junction
隧道结
1.
Metal organic chemical vapor deposition growth and structure design of tunnel junction of GaInP_2/GaAs/Ge tandem solar cells;
GaInP_2/GaAs/Ge级联电池隧道结的结构设计及金属有机化学汽相淀积生长研究
2.
Effects of surface roughness in the Al-Al_2O_3-Ni tunnel junctions;
Al-Al_2O_3-Ni隧道结中的表面粗糙度效应
3.
Study of Spin Transport in Tunnel Junctions with Multiferroic Barriers
多铁垒隧道结的自旋输运
6) tunneling junction
隧道结
1.
Fabrication and properties of nano metric tunneling junction;
纳米隧道结的制备和特性研究
2.
Taking into account the spin polarized and interface roughness scattering effect, within scattering formalism, we calculate the shot noise in the ferromagnet superconductor tunneling junction.
考虑到铁磁层中的自旋极化效应与粗糙界面散射效应 ,利用散射理论 ,讨论铁磁 超导隧道结中的散粒噪声 。
3.
For studying the effects of in-between layers on the transport properties of tunneling junctions, we prepared a series of Co/Al_2O_3/FeNi tunneling junction with different thickness of Al_2O_3,and studied their transport properties at 77?K.
制备了不同Al2O3厚度的Co/Al2O3/FeNi隧道结,并在77K温度下测量了其输运特性。
补充资料：`S_1-I-S_2`隧道结（$S_1-I-S_2$tunneljunction）
`S_1-I-S_2`隧道结（$S_1-I-S_2$tunneljunction）
是指两种不同超导体S1和S2间夹有绝缘介质层I的隧道结，其I-V特性曲线如图。
由于S1和S2不同，Δ1(T)和Δ2(T)也不等。图中Vmax=|Δ2-Δ1|/e，Vmax=(Δ1 Δ2)/e，在这两者之间是负阻区，而V≥Vmax时，隧道电流迅速上升并接近N-I-N的情景。由负电阻特性和电流的极大和极小可测定Δ1和Δ2。但在T=0K时，因没有热激发准粒子，所以只有当V≥(Δ1 Δ1)/e时才发生准粒子隧道效应。对S-I-S隧道结，Δ1=Δ2，其单电子隧道效应的I-V特性曲线类同于S-I-N的I-V曲线形状。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条