This paper introduces one measuring method for the silicon ingot based on the X-ray diffraction principle,and the measuring model was set up simultaneous.

The content of oxygen,carbon and metal impurities in the remelted material was analyzed so as to find out if the pot material could be used as the feedstock to produce multi-crystal silicon ingot for solar cell.

In this paper,we briefly discussed the working principle and structure composition of polysilicon ingot furnace using solar cells,also we mainly introduced the lifting devices of polysilicon ingot furnace door and the structural design of thermal shield frame s lifting device.

Temperature Control System Based on Differential ahead PID Algorithm of Polysilicon Ingot Furnace

The micro-tribological and nano-mechanic properties of Ar~+ implanted single-crystal silicon were investigated by using a Micro-tribology Text and a Nano Indenter System, The results show that Ar~+ implantation of single-crystal silicon had increased the wear-resistance, the best dose is 1×10~(16) ions /cm~2.

In Chemical-Mechanical polishing experiments we produced optical quality super smooth surfaces on single-crystal silicon, but cannot insure the surface figure.

The nano-scratch behaviors of Ar+ implanted single-crystal silicon were investigated by a nano indenter system, the micro-structure of the implanted layer was analyzed with TEM.