p 型掺杂,p-doping,在线英语词典,英文翻译,专业英语

1) p-doping

p 型掺杂

2) p-doping

p型掺杂

This article gives a description of the progress in self-com-pensation model for p-doping, the codoping process and mechanism, PL .

使用金属有机物化学气相沉积(MOCVD)方法已经获得实用性的p型掺杂,但是其电学和光学特性都不能让人满意。

This paper was overviewed the basic properties of GaN-based material,analyzed key technologies in making blue GaN-based LEDs,such as MOVPE,P-doping ohmic contact,etching and chip dicing saw,and introduced recent progresses of technologies at present.

本文首先综述了GaN基材料的基本特性,分析了GaN基蓝光LED制程的关键技术如金属有机物气相外延,P型掺杂,欧姆接触,刻蚀工艺,芯片切割技术,介绍了目前各项技术的工艺现状,最后指出了需要改进的问题,展望了末来的研究方向。

In the case of no determination of Al composition and p-doping density in MOCVD epitaxy of AlGaInP double heterostructure light emitting diodes,the relation of Al composition and luminescent efficiency is gotten under various p-doping density by analyzing carrier transportion in double heterojunction of LED,and the principle of doping density and Al composition vs.

在AlGaInP四元系双异质结发光二极管 (DH LED)的材料生长过程中 ,限制层的Al组分与p型掺杂浓度的确定有较大的随意性 ,这对LED的发光不利。

3) p-type doping

P型掺杂

Photoluminescence mechanisms,p-type doping,p-n junction and diluted magnetic property of ZnO-based semiconductor thin film are discussed in detail.

详细探讨了ZnO薄膜材料的发光机理、P型掺杂、p-n结的生长和稀磁性能,并对国内外的发展情况和存在问题进行了分析和探讨。

ZnO film is the third generation semiconductor functional material) whose high quality p-type doping is the key for developing optoelectronic devices.

ZnO薄膜作为第三代半导体功能材料,高质量的p型掺杂是基于光电器件应用的关键。

In order to fabricate such optoelectronic devices, the key problem of p-type doping should be resolved.

为了开发ZnO短波长光电器件,首要解决的关键问题是氧化锌的p型掺杂。

4) boron-doped diamond

P型掺杂金刚石

A super electric double-layer capacitor with boron-doped diamond electrode;

P型掺杂金刚石电极双电层电容器研究

5) p-nc-Si:H thin film

p型掺杂多晶硅薄膜

6) n-type doping

n型掺杂

In this paper we mainly study preparation, properties and n-type doping of cubic boron nitride thin films.

本文主要研究立方氮化硼的制备、性质和n型掺杂等内容。

In this paper, the mechanisms of the reaction about N-type doping polysilicon which take PCl_3/H_2 as phosphor source were investigated theoretically for the first time with Gaussian98 program at B3LYP/6-311G** level.

本文分别研究了PCl_3/H_2在气相中和在硅衬底表面上的微观反应机理,以期为半导体N型掺杂技术提供必要的理论依据。

参考词条

电子型掺杂锰氧化物 pⅨ P） PⅣ P-IS P-Ⅲ p+p（p）碰撞 p-p-堆积 p-p堆积 PO（P_p） P-P图（P,P+1）图性质（p_p） P-P波 P-P间期 3,5-二羟基苯甲酸铜（金）矿

补充资料：掺杂型结构导电高分子

分子式：
CAS号：

性质：结构型导电高分子是指高分子本身具有导电结构，不需借助外加导电性材料的聚合物，多为线性共轭聚合物和某些高分子金属络合物。这些聚合物经过掺杂处理之后形成电荷转移络合物，掺杂后其电导率可以大幅度提高，一般可以提高几个数量级，甚至可以接近常见金属导体的电导率，如聚乙炔和聚吡咯经化学或者电化学掺杂处理后，其电导率可以达到102S/cm以上，在某些场合可以替代金属材料。其特点和应用参见本征型导电高分子。

说明：补充资料仅用于学习参考，请勿用于其它任何用途。

首页 \| 翻译 \| 影视 \| 论坛 \| 索引箱型掺杂 n-型掺杂 n 型掺杂电子型掺杂电子型掺杂高温超导体

1) p-doping p 型掺杂 2) p-doping p型掺杂 1. This article gives a description of the progress in self-com-pensation model for p-doping, the codoping process and mechanism, PL . 使用金属有机物化学气相沉积(MOCVD)方法已经获得实用性的p型掺杂,但是其电学和光学特性都不能让人满意。 2. This paper was overviewed the basic properties of GaN-based material,analyzed key technologies in making blue GaN-based LEDs,such as MOVPE,P-doping ohmic contact,etching and chip dicing saw,and introduced recent progresses of technologies at present. 本文首先综述了GaN基材料的基本特性,分析了GaN基蓝光LED制程的关键技术如金属有机物气相外延,P型掺杂,欧姆接触,刻蚀工艺,芯片切割技术,介绍了目前各项技术的工艺现状,最后指出了需要改进的问题,展望了末来的研究方向。 3. In the case of no determination of Al composition and p-doping density in MOCVD epitaxy of AlGaInP double heterostructure light emitting diodes,the relation of Al composition and luminescent efficiency is gotten under various p-doping density by analyzing carrier transportion in double heterojunction of LED,and the principle of doping density and Al composition vs. 在AlGaInP四元系双异质结发光二极管 (DH LED)的材料生长过程中 ,限制层的Al组分与p型掺杂浓度的确定有较大的随意性 ,这对LED的发光不利。 3) p-type doping P型掺杂 1. Photoluminescence mechanisms,p-type doping,p-n junction and diluted magnetic property of ZnO-based semiconductor thin film are discussed in detail. 详细探讨了ZnO薄膜材料的发光机理、P型掺杂、p-n结的生长和稀磁性能,并对国内外的发展情况和存在问题进行了分析和探讨。 2. ZnO film is the third generation semiconductor functional material) whose high quality p-type doping is the key for developing optoelectronic devices. ZnO薄膜作为第三代半导体功能材料,高质量的p型掺杂是基于光电器件应用的关键。 3. In order to fabricate such optoelectronic devices, the key problem of p-type doping should be resolved. 为了开发ZnO短波长光电器件,首要解决的关键问题是氧化锌的p型掺杂。 4) boron-doped diamond P型掺杂金刚石 1. A super electric double-layer capacitor with boron-doped diamond electrode; P型掺杂金刚石电极双电层电容器研究 5) p-nc-Si:H thin film p型掺杂多晶硅薄膜 6) n-type doping n型掺杂 1. In this paper we mainly study preparation, properties and n-type doping of cubic boron nitride thin films. 本文主要研究立方氮化硼的制备、性质和n型掺杂等内容。 2. In this paper, the mechanisms of the reaction about N-type doping polysilicon which take PCl_3/H_2 as phosphor source were investigated theoretically for the first time with Gaussian98 program at B3LYP/6-311G level. 本文分别研究了PCl_3/H_2在气相中和在硅衬底表面上的微观反应机理,以期为半导体N型掺杂技术提供必要的理论依据。参考词条电子型掺杂锰氧化物 pⅨ P） PⅣ P-IS P-Ⅲ p+p（p）碰撞 p-p-堆积 p-p堆积 PO（P_p） P-P图（P,P+1）图性质（p_p） P-P波 P-P间期 3,5-二羟基苯甲酸铜（金）矿补充资料：掺杂型结构导电高分子分子式： CAS号：性质：结构型导电高分子是指高分子本身具有导电结构，不需借助外加导电性材料的聚合物，多为线性共轭聚合物和某些高分子金属络合物。这些聚合物经过掺杂处理之后形成电荷转移络合物，掺杂后其电导率可以大幅度提高，一般可以提高几个数量级，甚至可以接近常见金属导体的电导率，如聚乙炔和聚吡咯经化学或者电化学掺杂处理后，其电导率可以达到102S/cm以上，在某些场合可以替代金属材料。其特点和应用参见本征型导电高分子。说明：**补充资料仅用于学习参考，请勿用于其它任何用途。
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