This article gives a description of the progress in self-com-pensation model for p-doping, the codoping process and mechanism, PL .

This paper was overviewed the basic properties of GaN-based material,analyzed key technologies in making blue GaN-based LEDs,such as MOVPE,P-doping ohmic contact,etching and chip dicing saw,and introduced recent progresses of technologies at present.

In the case of no determination of Al composition and p-doping density in MOCVD epitaxy of AlGaInP double heterostructure light emitting diodes,the relation of Al composition and luminescent efficiency is gotten under various p-doping density by analyzing carrier transportion in double heterojunction of LED,and the principle of doping density and Al composition vs.

Photoluminescence mechanisms,p-type doping,p-n junction and diluted magnetic property of ZnO-based semiconductor thin film are discussed in detail.

ZnO film is the third generation semiconductor functional material) whose high quality p-type doping is the key for developing optoelectronic devices.

In order to fabricate such optoelectronic devices, the key problem of p-type doping should be resolved.

In this paper we mainly study preparation, properties and n-type doping of cubic boron nitride thin films.

In this paper, the mechanisms of the reaction about N-type doping polysilicon which take PCl_3/H_2 as phosphor source were investigated theoretically for the first time with Gaussian98 program at B3LYP/6-311G** level.

Preparation and Electroluminescence Property of a Non-doping OLED Based on Zn(Q-Ph)_2 and DCJTB;