1) detrapped charge
脱阱电荷
1.
It is found that from room temperature to 100℃ and over 180℃, slow retrapping controls the transport of detrapped charge; however, from about 100℃ to 180℃, the transportation rule is changed from slow retrapping to fast retrapping and finally returning to slow retrapping.
结果显示在约100℃以下的较低温区和高于180℃以上的较高温区内慢再捕获效应控制着脱阱电荷的输运:而在100-180℃的温区内由慢再捕获效应过渡为快再捕获效应后再回到慢再捕获效应。
2) trapped charges
陷阱电荷
1.
The distribution of trapped charges and the relationship between the displacement of movable grating and applied voltage are analyzed in detail An e.
结构中SiO2绝缘层在外加电场作用下产生陷阱电荷,对器件的驱动特性产生影响。
3) full well capacity
满阱电荷
1.
Its dark current density and full well capacity decrease 2/3 and 1/2,respectively,when MPP implant dose is(6±2)×1011 cm-2.
当MPP注入剂量为(6±2)×1011cm-2时,其暗电流密度下降了2/3,满阱电荷下降了1/2。
4) charge traps
电荷陷阱
1.
In order to characterize accurately the distribution of charge traps on energy in polymer dielectric materials by using Photon-stimulated Discharge(PSD) Spectra,the raw PSD Spectra need to be normalized by the energy of light excitation.
为了利用光激电流谱准确地表征聚合物电介质材料中的电荷陷阱密度按能量分布的情况,需要将原始光激电流谱对光激发能量进行归一化。
5) trapped charge limited(TCL)
陷阱电荷限制(TCL)
6) border-trap
边界陷阱电荷
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条