Based on theoretical analysis,the errors of threshold voltage and drain current of SiC-based MOSFET coming from approximate calculation of interface-trapped charge were investigated.

Study of conductive property for a N-VDMOS interface trap under X-ray radiation;

Study on avalanche hot-electron injection of interface trap characteristic for thin film in nanometre range formed by PECVD;

This paper studies the interface trap features of novel thin rapid thermal nitrided SiOxNy film by the technique of avalanche hot-electron injection and the measurements of high frequency C-V and (luasi-static C-V characteristics.

Based on the two-step interface trap buildup model and the statistical thermodynamics mechanism of point defects in solids, a relation between the radiation induced increase of oxide hole-traps and the buildup of interface traps in MOSFET is proposed.

Two-dimensional device simulating software MEDICI was used to establish the structure model and physical model of an n-channel 6H-SiC MOSFET with interface traps having a exponential distribution.

A new experimental technique namely the linear cofactor difference sub-threshold voltage method is presented in this paper for extraction of the MOSFET interface traps induced by the gate oxide stress test and verified on N-MOSFETs.

The distribution of trapped charges and the relationship between the displacement of movable grating and applied voltage are analyzed in detail An e.

In order to characterize accurately the distribution of charge traps on energy in polymer dielectric materials by using Photon-stimulated Discharge(PSD) Spectra,the raw PSD Spectra need to be normalized by the energy of light excitation.