2) Time Multiplexed Deep Etching (TMDE)
交替复合深刻蚀
1.
Through the following research, including the patterning process of mask, the selectivity of mask materials for silicon, the deposition process of passivation layer and the process of silicon anisotropic etching in Time Multiplexed Deep Etching (TMDE), the through-silicon via hole has been achieved.
本文采用中科院微电子研究中心ICP-98A高密度等离子体刻蚀机,研究了不同工艺参数对硅刻蚀速率的影响,获得较好的硅快速刻蚀工艺;通过对掩蔽层图形化的工艺、掩蔽层材料对硅的刻蚀选择比、交替复合深刻蚀技术中的单步保护层淀积工艺以及硅的各向异性刻蚀工艺等研究,实现了硅基通孔结构。
3) etching
[英]['etʃɪŋ] [美]['ɛtʃɪŋ]
蚀刻法;腐蚀;加工;酸洗
4) combined machining
复合加工
1.
Study of New Method and Equipment of Combined Machining Based on High Temperature Alloy;
复合加工高温合金新方法及其装备研究
2.
Experimental results show that the variational trend of grinding force and short circuit ratio is similar in ultrasonic vibration aided electrical discharge grinding(UEDG) process,that is,the grinding force and short circuit rate will be increased in the combined machining process.
实验结果表明:在超声振动辅助磨削-电火花脉冲放电复合加工过程中,平均磨削力的变化与短路率的变化趋势相似。
3.
The chief machining methods of PCD material which is being studied or have been used is presented,which is grinding,lapping,electrical discharge machining,laser processing,chemical processing,ultrasonic machining and combined machining.
介绍了国内外正在研究和已经应用的聚晶金刚石的主要加工方法,即磨削加工、研磨加工、电火花加工、激光加工、化学加工、超声加工和复合加工,并对这些加工方法的特点、机理及影响因素、适用范围进行了分析。
5) compound machining
复合加工
1.
The process model and compound machining technologies of PECM are expatiated, and the developing prospect and key research directions of PECM are previewed.
介绍了脉冲电化学加工(PECM)的机理,综述了PECM/PECMM的国内外技术现状及研究进展,详细阐述了脉冲电化学加工的工艺模型和复合加工技术,并展望了今后的发展前景和重点研究方向。
2.
Taking the developing Nanosystem300 aspheric surface compound machining system for an example, this paper pays more attention to the essential problems existing in the developing process of machine tool.
较系统的介绍了非球面零件超精密加工各方面的技术,并结合正研制的 Nanosystem300非球面复合加工系统,着重强调了非球面机床研制过程中应注意的问题。
3.
Based on the consultation of a great deal of domestic and overseas latest data,the development of ultra-precision machining technology,the ultra-precision cutting、grinding、 lapping as well as nontraditional ultra-precision machining and compound machining technology are overviewed,the probable further trend of ultra-precision machining is forecasted.
根据当前国内外超精密加工技术的发展状况,对超精密切削、磨削、研磨以及超精密特种加工及复合加工技术进行综述,简单地对超精密加工的发展趋势进行预测。
补充资料:电化学刻蚀
分子式:
CAS号:
性质:也称电解浸蚀。在一定的电解液中,采用电化学原理选择性地除去某种金属(或半导体)的过程。可外加电压(为电刷镀的逆过程)或不外加电压(化学刻蚀)。影响电化学蚀刻的因素有电场强度和频率、探测器厚度、蚀刻液浓度和径迹倾角等。化学刻蚀法使用较多,例如在印刷电路板的制作中,通过如下反应:Cu→Cu2++2e-(阳极) ;2Fe3++2e-→2Fe2+(阴极)。按预作保护的图样除去绝缘基板上的铜覆盖层。在微电子装置的制作中,对半导体(如硅)选择性地刻蚀是关键步骤。常用的刻蚀剂有CuCl2,FeCl3,H2CrO4,NH4Cl,H2O2-H2SO4等。
CAS号:
性质:也称电解浸蚀。在一定的电解液中,采用电化学原理选择性地除去某种金属(或半导体)的过程。可外加电压(为电刷镀的逆过程)或不外加电压(化学刻蚀)。影响电化学蚀刻的因素有电场强度和频率、探测器厚度、蚀刻液浓度和径迹倾角等。化学刻蚀法使用较多,例如在印刷电路板的制作中,通过如下反应:Cu→Cu2++2e-(阳极) ;2Fe3++2e-→2Fe2+(阴极)。按预作保护的图样除去绝缘基板上的铜覆盖层。在微电子装置的制作中,对半导体(如硅)选择性地刻蚀是关键步骤。常用的刻蚀剂有CuCl2,FeCl3,H2CrO4,NH4Cl,H2O2-H2SO4等。
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参考词条