1) Se doped epitaxial layer
掺Se外延层
2) doped epitaxial layer
掺杂外延层
3) arsenic doped epi
掺砷外延层
4) thickness and doping concentration of EPI
外延层厚度和掺杂浓度
1.
By the theoretical calculation,the thickness and doping concentration of EPI were improved.
通过理论计算,优化了外延层厚度和掺杂浓度,对影响击穿电压的相关结构参数进行设计,探讨了VDMOSFET的终端结构。
6) silicon epilayer
硅外延层
1.
Sub-micron silicon epilayer deposited by a novel Ultrahigh Vacuum Chemical Deposition System and fabrication of high frequency device;
UHV/CVD生长亚微米薄硅外延层及其高频器件研制
补充资料：掺掺
1.女手纤美貌。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条