1.
Test method for crystallographic perfection of epitaxial layers in silicon by etching techniques
GB/T14142-1993硅外延层晶体完整性检查方法腐蚀法
2.
Fabrication of SOI Material Using Epitaxial Layer Transfer of Porous Silicon and Luminescence Study of Modified Porous Silicon;
多孔硅外延层转移SOI新材料制备与改性多孔硅发光性能的研究
3.
Test method for stacking fault density of epitaxial layers of silicon by interference-contrast microscopy
GB/T14145-1993硅外延层堆垛层错密度测定干涉相衬显微镜法
4.
Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
GB/T14847-1993重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法
5.
Silicon epitaxial layers--Determination of carrier concentration--Mercury probe Voltage-capacitance method
GB/T14146-1993硅外延层载流子浓度测定汞探针电容-电压法
6.
Investigation on the damage from ECR Ar-plasma cleaning in the interface of low temperature epi-silicon by UHV/CVD
微波等离子原位表面清洗对超高真空低温气相硅外延层界面损伤的研究
7.
ESVAC (Epitaxial Silicon Variable Capacitance Diode)
外延硅可变电容二极管
8.
gold-epitaxial silicon high-frequency diode
金-外延硅高频二极管
9.
silicon on sapphire technology
蓝宝石上外延硅技术
10.
silicon on sopphire technique
蓝宝石上外延硅工艺
11.
Epitaxial Graphene on SiC
碳化硅表面的外延Graphene
12.
Epitaxial Growth of Cubic Silicon Carbide on Silicon by Sublimation Method;
用升华法在硅衬底上外延生长β碳化硅薄膜
13.
silicon epitaxial highcurrent switching diode
硅外延大电流开关二极管
14.
Study of GaN Epitaxial Growth on Si-based Micro Structures;
硅基微结构上的GaN外延生长研究
15.
Study of the Growth and Properties of Silicon Carbide Epilayer;
碳化硅外延材料生长及表征技术研究
16.
Selectively Grown SiGe and Metal-Induced Growth of Poly-SiGe Based on UHVCVD;
基于UHVCVD的选择性外延锗硅与金属诱导生长多晶锗硅的研究
17.
Theoretical Studies on the Reaction Mechanism of PCl_3 with H_2 in Epitaxy Growth of n-type Silicon;
PCl_3/H_2外延生长N型硅反应机理的理论研究
18.
Theoretical Studies on the Reaction Mechanism of BCl_3 with H_2 in Epitaxy Growth of p-type Silicon;
BCl_3/H_2外延生长P型硅反应机理的理论研究