2) photon migration
光子迁移
1.
In this paper, a new photon migration approach for modeling fluorescence in tissue is described in detail based on di.
该文在组织漫反射光MonteCarlo仿真的基础上 ,提出了一种新的荧光光子迁移方法 ,并由此实现了对组织自体荧光的仿真。
2.
With theory of photon migration,distrbution of photon and energy in tissue could be calculated.
对前者的描述主要为 ,基于传输理论的解析法和 Monte～ Carlo模拟 ,生物组织中光子迁移规律的研究能定量描述组织中的光分布 ,并进一步获得生物组织中的热分布 ;考虑到了生物组织特性 ,所建立的宏观及微观生物传热模型 ,全面描述了生物组织中温度场分布及变化规律。
3) photoluminescence energy
光跃迁能
1.
The results show that when there is hydrogenic-like impurity in the center of QDs,the exciton ground-state energy and the photoluminescence energy are reduced,and the exciton binding energy and the stability of exciton state ar.
结果表明:量子点中心的类氢杂质使激子的基态能降低,结合能升高,Q D系统的稳定性增强,光跃迁能减小;杂质位于量子点上界面时,激子的基态能最小,结合能最大,系统最稳定;随着杂质从量子点的上界面沿着z轴移至下界面,激子基态能和光跃迁能增大,结合能减小。
4) optical transition
光跃迁
1.
The mechanism of the optical transition without phonons between the conduction band and the valence band in doped SiGe alloy is investigated, and the model of no phonon optical transition originated from the statistical distribution of the impurities is suggested.
研究了Ｓｉ１－ｘＧｅｘ合金半导体中无声子参与光跃迁的产生机制，对由杂质无规分布引起的无声子参与光跃迁给出了一个物理模型。
2.
The mechanism of the near-band-gap optical transition in doped SiGe/Si quantum well is investigated, and the model of the near-band-gap optical transition originated from the statistical distribution of the impurities is suggested.
本文研究了SiGe/Si量子阱中近带边光跃迁的产生机制,对由杂质无规分布引起的近带边光跃迁给出了一个物理模型。
6) transition due to light
光致跃迁
补充资料：表光合强度(见光合强度)
表光合强度(见光合强度)
forecast of sowing or transplanting time
b iaoguanghe qiangdu表光合强度见光合强度
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条