1) optical transition intensity
光跃迁强度
2) oscillator strengths for interband transitions
带间光跃迁振子强度
1.
The oscillator strengths for interband transitions of strained GaAs layers grown on GexSi1-x alloys along the (001) plane and the third-order nonlinear optical susceptibilities of strained superlattices (Si2)4/(GaAs).
采用紧束缚方法计算了生长在ＣｅｘＳｉ１－ｘ合金（００１）面上的应变ＧａＡｓ层的带间光跃迁振子强度，以及生长在Ｓｉ（００１）衬底上的应变超晶格（Ｓｉ２）４／（ＧａＡｓ）４的三次非线性光极化率。
3) Electron transition strength
电子跃迁强度
4) transitions induced by intense laser
强激光引起的跃迁
1.
They are violated in the transitions induced by intense lasers.
跃迁的玻尔条件和光电效应的爱因斯坦定律都是微扰近似的结果,在强激光引起的跃迁中不成立。
5) photoluminescence energy
光跃迁能
1.
The results show that when there is hydrogenic-like impurity in the center of QDs,the exciton ground-state energy and the photoluminescence energy are reduced,and the exciton binding energy and the stability of exciton state ar.
结果表明:量子点中心的类氢杂质使激子的基态能降低,结合能升高,Q D系统的稳定性增强,光跃迁能减小;杂质位于量子点上界面时,激子的基态能最小,结合能最大,系统最稳定;随着杂质从量子点的上界面沿着z轴移至下界面,激子基态能和光跃迁能增大,结合能减小。
6) optical transition
光跃迁
1.
The mechanism of the optical transition without phonons between the conduction band and the valence band in doped SiGe alloy is investigated, and the model of no phonon optical transition originated from the statistical distribution of the impurities is suggested.
研究了Ｓｉ１－ｘＧｅｘ合金半导体中无声子参与光跃迁的产生机制，对由杂质无规分布引起的无声子参与光跃迁给出了一个物理模型。
2.
The mechanism of the near-band-gap optical transition in doped SiGe/Si quantum well is investigated, and the model of the near-band-gap optical transition originated from the statistical distribution of the impurities is suggested.
本文研究了SiGe/Si量子阱中近带边光跃迁的产生机制,对由杂质无规分布引起的近带边光跃迁给出了一个物理模型。
补充资料：表光合强度(见光合强度)
表光合强度(见光合强度)
forecast of sowing or transplanting time
b iaoguanghe qiangdu表光合强度见光合强度
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条