1) luminescent transition
发光跃迁
2) spontaneous transition
自发跃迁
3) photoluminescence energy
光跃迁能
1.
The results show that when there is hydrogenic-like impurity in the center of QDs,the exciton ground-state energy and the photoluminescence energy are reduced,and the exciton binding energy and the stability of exciton state ar.
结果表明:量子点中心的类氢杂质使激子的基态能降低,结合能升高,Q D系统的稳定性增强,光跃迁能减小;杂质位于量子点上界面时,激子的基态能最小,结合能最大,系统最稳定;随着杂质从量子点的上界面沿着z轴移至下界面,激子基态能和光跃迁能增大,结合能减小。
4) optical transition
光跃迁
1.
The mechanism of the optical transition without phonons between the conduction band and the valence band in doped SiGe alloy is investigated, and the model of no phonon optical transition originated from the statistical distribution of the impurities is suggested.
研究了Ｓｉ１－ｘＧｅｘ合金半导体中无声子参与光跃迁的产生机制，对由杂质无规分布引起的无声子参与光跃迁给出了一个物理模型。
2.
The mechanism of the near-band-gap optical transition in doped SiGe/Si quantum well is investigated, and the model of the near-band-gap optical transition originated from the statistical distribution of the impurities is suggested.
本文研究了SiGe/Si量子阱中近带边光跃迁的产生机制,对由杂质无规分布引起的近带边光跃迁给出了一个物理模型。
6) transition due to light
光致跃迁
补充资料：发光
分子式：
CAS号：
性质：此处指物体除温度外，依赖其他原因激发获得能量发射辐射的发光(冷光)。发光过程经过吸收能量、能态改变和发射辐射三个步骤。引起物质发光的原因有：生物发光、化学发光、电致化学发光、荧光、磷光、光致发光、声致发光、热致发光、辐射发光与摩擦发光等。
CAS号：
性质：此处指物体除温度外，依赖其他原因激发获得能量发射辐射的发光(冷光)。发光过程经过吸收能量、能态改变和发射辐射三个步骤。引起物质发光的原因有：生物发光、化学发光、电致化学发光、荧光、磷光、光致发光、声致发光、热致发光、辐射发光与摩擦发光等。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条