1) thick-film sensor
厚膜传感器
2) thick film
厚膜
1.
Preparation and characterization of PZT thick film for piezoelectric cantilever beam by sol-gel;
用于压电悬臂梁的PZT厚膜的溶胶-凝胶制备及表征
2.
Fabrication and investigation of Si-based PZT thick films;
硅基高度择优取向PZT厚膜的制备及性能研究
3.
Study on Integrated Capacitive Pressure Sensor of Thick Film;
电容式压力传感器的厚膜集成化研究
3) thick films
厚膜
1.
Studies on the BaFe_(12)O_(19) ferrite permanent thick films prepared by screen-printing;
丝网印刷制备钡铁氧体永磁厚膜的研究
2.
This article describes the main growth methods of MgB_2 thin/thick films since the superconductivi- ty of MgB_2 had been discovered,including the comparisons of substrates and annealing processes,and summarizes the research progress of fabricating MgB_2 tunnel junctions briefly.
介绍了自 MgB_2超导电性被发现以来,用于制备 MgB_2薄膜/厚膜的各种基片、主要生长方法以及退火工艺,简单概述了薄膜制作超导隧道结方面的研究状况。
3.
The recent progresses on the liquid epitaxial growth of REBCO (RE=rare earth) thick films are reviewed.
本文从基片和种膜、LPE的初始阶段研究和超导性能的控制这三个方面回顾总结了液相外延生长REBCO(RE=稀土元素)厚膜的研究进展。
4) thick-film
厚膜
1.
Development of thick-film intelligent pressure transmitter with low pressure scale;
小量程智能厚膜压力变送器的研制
2.
Applied research of nickel paste in thick-film humidity sensitive resistor;
镍浆在厚膜湿敏电阻器上的应用研究
3.
The linearity of the micro-pressure thick-film sensor;
厚膜微压传感器的线性化
5) Piezoelectric Thick Film
压电厚膜
1.
Studies of PMS-PNN-PT Piezoelectric Thick Film Ceramic Material;
PMS-PNN-PT压电厚膜陶瓷材料的研究
2.
Effects of buffer layer on properties of PMS-PNN-PZT piezoelectric thick film material;
缓冲层对PMS-PNN-PZT压电厚膜材料性能的影响
3.
In this paper,the development of the method for powder synthesis and new preparation technique of ceramic were reviewed,such as sol-gel method,hydrothermal method,molten salt method,piezoelectric thick film techology,spark plasma sintering technology.
本文从粉体制备方法和陶瓷制备新技术两个方面综述了近几年无铅压电陶瓷制备方法(如溶胶-凝胶法、水热法、熔盐法、压电厚膜技术、放电等离子烧结技术等)的研究进展,并对制备出的无铅压电陶瓷的性能与传统方法进行了对比,讨论了不同制备方法的优缺点。
6) thick film paste
厚膜浆料
1.
Review of development on thick film paste for AlN substrate;
AlN基板用厚膜浆料发展评述
参考词条
补充资料：振膜式传感器
以圆形恒弹性合金膜片为敏感元件的谐振式传感器。膜片的固有振动频率随膜片上所受压力的变化而变化，通过相应的测量电路就可获得与被测压力成一定关系的频率信号。振膜式传感器广泛用于压力测量，它由空腔、压力膜片、振动膜片、激励线圈、拾振线圈和放大振荡电路组成(见图)。在空腔受压力影响时,压力膜片即发生变形,装在压力膜片支架上的振膜则因支架角度改变而发生刚度变化。膜片的振动频率取决于振膜的刚度、压力膜片和支架的刚度。在振膜的两侧分别放置激励线圈和拾振线圈。工作时，激励线圈接通交变电流而使膜片产生振动，拾振线圈则将所感应的振动信号送往放大振荡电路，该信号经放大后又正反馈给激励线圈，使振膜保持它固有频率的振动。激励线圈和拾振线圈还可以用两个压电元件代替，其结构也可做成使振膜直接感受被测压力。作为拾振器的压电元件利用正压电效应将振动信号送往放大器，该信号经放大后又正反馈到作为激振器的压电元件，利用逆压电效应产生振动激励以维持膜片的振动。为提高稳定性，压电元件的固有振荡频率应远离振膜的固有振荡频率，并设置高频衰减网络抑制高频振荡。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。