1) abnormal I-V characteristic
反常I-V特性
2) I-V properties
I-V特性
1.
Study of I-V properties in Si/SiO_2 multi-layer films;
Si/SiO_2多层膜的I-V特性研究
2.
Effect of microstructure on the I-V properties of Si/SiO_2 film
薄膜结构对Si/SiO_2 I-V特性的影响
3) I-V characteristics
I-V特性
1.
The current transport mechanisms are analyzed by the I-V characteristics curve.
采用射频磁控溅射方法制备了镶嵌纳米碳粒的SiO2薄膜,利用Au/(C/SiO2)/p-Si结构的I-V特性曲线,对其电流输运机理进行了分析。
2.
I-V characteristics show that surface leakage of n~+-on-p-HgCdTe photovoltaic detectors was reduced by surphur-passivation.
I-V特性曲线显示,经过化学硫化的n+-p-HgCdTe器件的漏电流有所下降。
3.
Simulation results show that the model with channel-length modulation effects match the measured I-V characteristics in the saturation region.
提出一种改进的4H-SiC MESFET非线性直流解析模型,该模型基于栅下电荷的二维分布进行分析,在分析电场相关迁移率、速度饱和的基础上,考虑沟道长度调制效应对饱和区漏电流的影响,建立基于物理的沟道长度调制效应模型,模拟结果与实测的I-V特性较为吻合。
4) V-I characteristics
V-I特性
1.
To evaluate PV module performance under actual illumination and temperature operating conditions over the course of a day,V-I characteristics of PV module,operating temperature,ambient temperature and solar radiation were measured.
为了研究在户外工作条件下太阳电池组件的实际工作性能,在一天过程中的太阳电池组件V-I特性、组件温度、环境温度和太阳辐照度被测试。
5) I-V characteristic
I-V特性
1.
Fabrication and I-V characteristics of ZnO nanowire-based field effect transistors;
ZnO纳米线场效应管的制备及I-V特性研究
2.
I-V characteristic of phonon-cooled hot-electron bolometer;
超导HEB的I-V特性模拟
3.
Electrochemical C-V testing method was adopted,the I-V characteristic of InP/InGaAs/InP epitaxial structure was measured and analyzed,and the heterojunction interfacial electrical properties were also characterized and analyzed.
采用电化学C-V测试方法,测量分析了InP/InGaAs/InP外延结构的I-V特性,对异质结界面的电学性质进行了表征和分析。
补充资料：艾伦氏反常定律