1) I-V characteristics
I-V特性曲线
1.
The parameters and I-V characteristics of the RTD have been measured,and the effects of quantum well width and thickness of the cap layer on the RTD I-V characteristics are analyzed.
进行直流参数测试,得到RTD的I-V特性曲线,对量子阱宽度和帽层厚度对I-V特性的影响进行了分析。
2.
The device simulation of AlGaAs/GaAs resonant tunneling diode(RTD)is performed by ATLAS,SILVACO softwares,and RTD I-V characteristics are obtained with different structures.
使用SILVACO公司的器件模拟软件ATLAS对AlGaAs/GaAs共振隧穿二极管(RTD)进行了器件模拟,得到了不同结构的RTD的I-V特性曲线。
2) I-V curve
I-V特性曲线
1.
After numerical correction by Matlab and LabVIEW,the I-V curve in the standard testing condition is obtained.
5太阳光,通过数据采集模块采集初始电流、电压、温度、光谱响应参数,经Lab-VIEW和Matlab运算修正复现后,得到标准条件下的I-V特性曲线。
3) I-V characteristic curve
I-V特性曲线
1.
In order to get I-V characteristic curves and characteristic parameters of solar cells, the software system for solar cell testing is developed using Visual C++ based on Windows operator system.
为了获得太阳电池的I-V特性曲线及特性参数,利用Visual C++语言开发出基于Windows平台的太阳电池测试软件系统,并对基于补偿原理的I-V测试电路参数匹配进行了详细分析。
4) V I Signature
V-I特性曲线
5) I～V curve
I~V特性曲线
补充资料：OC曲线(见抽样特性曲线)
OC曲线(见抽样特性曲线)
operating characteristic curve: see operating characteristic curve of sampling
O(:quxlanOC曲线(叮旧瓜叮唱Cha比‘teristic~抽样特性曲线。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条