2) 0.35um SiGe BiCMOS technology
0.35um SiGe BiCMOS工艺
3) SiGe technology
SiGe工艺
1.
35 μm SiGe technology,synthesis,static timing analysis and placement & routing were made.
35μm SiGe工艺库完成综合、静态时序分析、布局布线,最后在200 MHz时钟频率下通过Nanosim后仿真。
4) BiCMOS technology
BiCMOS工艺
1.
5μm one-polysilicon, double-metal N-well BiCMOS technology, hspice simulation shows that the overheating threshold is 150℃ and the thermal hysteresis threshold is 115℃, the maximum current is below 150μA.
5μm的P衬N阱数模混合1P2MBiCMOS工艺。
2.
A new thresholded neuron circuit by BiCMOS technology is proposed in this paper.
提出了一种新型的阈值神经元电路,它采用BiCMOS工艺实现,具有结构简单、集成度高、速度快等特点,能很好地实现神经元的基本运算功能,如“非”、“析取”、“合取”、“异或(XOR)”等。
3.
Circuits design with BiCMOS technology has not only the characteristics of CMOS circuits, but also some merits of bipolar technology, so it has found wide use.
BiCMOS工艺在电路设计方面既具备CMOS电路的特点,又兼备双极工艺的一些优点,因此得到了较为广泛的应用。
5) 1.2 μm BiCMOS process
1.2μm BiCMOS工艺
6) BiCMOS
BiCMOS工艺
1.
Design Optimization of SiGe/Si HBT Based on 1.5μm BiCMOS Technology;
基于1.5μm BiCMOS工艺的SiGe HBT器件设计优化
2.
Fabricated with a 2-μm BiCMOS technology, the D/A converter has a power dissipation of 500 mW.
0μmBiCMOS工艺制作。
3.
The latest development of BiCMOS process, complementary bipolar technology and SOI deep trench isolation technology are elaborated, with emphasis on BiCMOS technology.
介绍了模拟集成电路工艺的发展过程和现状,讨论了国内的BiCMOS工艺、互补双极工艺(CB)、和SOI双极工艺的最新进展。
补充资料：BiCMOS集成电路