1) atmospheric chemical vapor deposition
常压气相沉积
2) APCVD
常压化学气相沉积
1.
Preparation of self-cleaning glass coated with TiO_2 on a float glass line by APCVD method
在线常压化学气相沉积方法制备TiO_2自洁薄膜玻璃(英文)
2.
TiN films were coated on glass substrates by atmospheric pressure chemical vapor deposition(APCVD) under different growth conditions,including different substrate temperatures and a gaseous mixture of varying chemical concentrations.
本研究以TiCl4和NH3为反应气体,N2为保护气氛,用常压化学气相沉积法(APCVD)在玻璃基板上沉积制备得到了一系列不同反应温度和原料浓度的TiN薄膜。
3.
N-doped TiO_2 films were grown by atmospheric pressure chemical vapor deposition(APCVD) with TiCl_4 and NH_3 as precursors.
用常压化学气相沉积(APCVD)法,以四氯化钛(TiCl4)、氧气(O2)和氨气(NH3)作为气相反应先驱体,成功制备了掺氮二氧化钛(TiO2)薄膜。
3) atmospheric pressure chemical vapor deposition
常压化学气相沉积
1.
Titanium nitride(TiN)films were prepared by the atmospheric pressure chemical vapor deposition process using titanium tetrachloride and ammonia as reactive gases.
以TiCl4和NH3为原料,用常压化学气相沉积法在玻璃基板表面沉积得到了TiN薄膜。
2.
TiO_2/SnO_2:F composite films were deposited by atmospheric pressure chemical vapor deposition with Ti(OC_3H_7)_4 as pre- cursors and SnO_2:F coated glass as substrates.
以Ti(OC_3H_7)_4为先驱体,SnO_2:F镀膜玻璃为基板,采用常压化学气相沉积法制备了TiO_2/SnO_2:F复合薄膜。
4) APCVD
常压化学气相沉积法
1.
SiO2 functional coatings with TEOS as substrate and air as carrier gas were prepared on steel HP40(25Cr35Ni) by means of atmospheric pressure chemical vapor deposition(APCVD).
以正硅酸乙酯为源物质,空气为载气,采用常压化学气相沉积法在HP40(25Cr35Ni)合金钢基体上制备了SiO2涂层;研究了沉积温度、源物质温度以及气体流量等工艺参数对沉积速率的影响,并通过XRD和SEM分析了涂层的物相组成及表面形貌。
2.
High activity TiO_2 and its composite catalyst were prepared by Atmospheric PressureChemical Vapor Deposition (APCVD) in this paper.
本文采用常压化学气相沉积法(Atmospheric Pressure Chemical Vapor Deposition,APCVD)制备了TiO_2纤维及其掺杂复合催化剂,通过各种现代分析手段对制得的催化剂进行了表征;并进行了光催化活性测定。
5) atmospheric pressure metalorganic chemical vapor deposition
常压金属有机物化学气相沉积
6) atmospheric-presure metal-organic chemical vapor deposition
常压金属化学气相沉积法
补充资料:等离子化学气相沉积
分子式:
CAS号:
性质:PCVD 化学气相沉积(CVD)法是制备无机材料,尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD,可在较低的温度下沉积,涂层均匀不剥落。
CAS号:
性质:PCVD 化学气相沉积(CVD)法是制备无机材料,尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD,可在较低的温度下沉积,涂层均匀不剥落。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条