1) dark saturation current
饱和暗电流
1.
Through measuring I-V character of solar cells, short circuit current and open circuit voltage and series resistant and shunt resistant could be gained, and then minority carrier lifetime and dark saturation current are calculated by the new method.
通过测试成品电池的Ⅰ-Ⅴ特性得到开路电压、短路电流、串联电阻和并联电阻的值,计算得到饱和暗电流和太阳电池基区少数载流子寿命。
2) Saturation Current
饱和电流
1.
The electric resistance enlarges and the saturation current declines due to drying of concrete in the early days,and in the end they tend towards the stability.
本文实验研究了水泥基pn结的伏安特性,结果表明由钢纤维混凝土和碳纤维混凝土组成的pn结具有比较典型的pn结伏安特性,且随着期龄的延长,混凝土变得干燥而电阻增大,水泥基pn结导电能力减弱,单向导电功能逐渐加强,反向饱和电流趋向稳定。
3) Saturated current
饱和电流
1.
A new physical model of the MESFET s saturated current is proposed.
本文提出一种改进的基于物理的GaAsMESFET饱和电流模型。
2.
For researching the saturated current and checking the LED chips′ reliability, the relat.
本文汇集各厂家 In Ga Al P超高亮 LED芯片 ,并制成器件 ,对其多种性能进行对比分析 ,测试超高亮 LED的发光强度与电流的关系以研究饱和电流的大小 ,并进行电耐久性试验以考核超高亮 LED芯片的可靠性 ;简要介绍了封装工艺设计对超高亮 L ED性能参数的影响 ,并提出超高亮 LED性能及可靠性的其它要求 ,为客户选用超高亮 LED提供相对的依据。
4) current saturation
电流饱和
5) saturated drain current
饱和漏电流
1.
It is studied that the influence of AB microdefects in semi-insulating GaAs substrate grown by LEC on the property of MESFET devices including transconductance (g m),saturated drain current (I dss),and pinch-off voltage (V p) .
研究了LEC法生长SI GaAs衬底上的AB微缺陷对相应的MESFET器件性能 (跨导、饱和漏电流、夹断电压 )的影响 。
6) saturated photocurrent
饱和光电流
1.
An analysis of relation between saturated photocurrent and incident light frequency with same incident light intensity;
光强一定时饱和光电流随入射光频率的变化关系辨析
补充资料：暗电流
分子式：
CAS号：
性质：光度计的光电元件，当没有光照射在光阴极上时，流过的背景电流。它干扰微弱光信号的测量，并与环境温度有关，故在手动单光束仪器中每次测量均需加以校正。
CAS号：
性质：光度计的光电元件，当没有光照射在光阴极上时，流过的背景电流。它干扰微弱光信号的测量，并与环境温度有关，故在手动单光束仪器中每次测量均需加以校正。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条