1) the complex film of amorphous carbon and Mo_2C
非晶碳/Mo_2C复合薄膜
2) Amorphous carbon film
非晶碳薄膜
1.
Hydrogenated amorphous carbon films were deposited using ECR plasma with benzene as carbon source at varying substrate temperature.
用苯作为源气体 ,使用微波电子回旋共振 (ECR)等离子体气相沉积法在不同温度下制备了含氢非晶碳薄膜 ,研究了沉积温度对薄膜的直流电阻率、击穿场强的影响 ,发现它们与沉积速率密切相关 。
2.
The results show that amorphous carbon films have high etching resistance against oxygen plasma, and etch rates of the films correlated not only with etching processing parameters, also with deposition conditions.
用苯作源气体在一个微波电子回旋共振等离子体系统中沉积了含氢非晶碳薄膜 ,研究了沉积参数对膜的生长速率的影响。
3) amorphous carbon films
非晶碳薄膜
1.
Amorphous carbon films have been deposited on Si plate from the solution of acetonitrile and deion- ized water at 200 V and 60℃.
利用液相电沉积的方法在200V、60℃条件下,从乙腈的水溶液中沉积出非晶碳薄膜,通过拉曼光谱对薄膜的结构进行了表征,并利用原子力显微镜和扫描电子显微镜对薄膜不同生长阶段的形貌进行了考察。
4) amorphous carbon-polyimide film
非晶碳-聚酰亚胺复合薄膜
1.
Prebreakdown was observed under field electron emission experiments from amorphous carbon-polyimide films which were firstly deposited on silicon substrate with high electrical conductivity by pulse laser deposition.
利用脉冲激光沉积技术（ＰｕｌｓｅｄＬａｓｅｒＤｅｐｏｓｉｔｉｏｎ）首次制备出非晶碳－聚酰亚胺复合薄膜，用其做为冷阴极，观察到其场致电子发射的预击穿现象，预击穿后阈值场强为７Ｖ／μｍ，最大发射电流密度为１。
2.
The lower turn-on electrical field and higher current density wis firstly obtained from amorphous carbon-polyimide films deposited on silicon substrate with high electrical conductivity by pulse laserd deposition.
利用脉冲激光沉积技术在高电导率衬底上，制备了非晶碳－聚酰亚胺复合薄膜，首次观察到非晶碳－聚酰亚胺复合薄膜具有较低的电子发射阈值电场和较高的发射电流密度。
5) fluorinated amorphous carbon film
氟化非晶碳薄膜
1.
As one of promising interlay dielectrics used in the future ULSI, fluorinated amorphous carbon film (a-C: F) has been attracted intensively.
利用静电探针和光强标定的发射光谱(AOES)研究了CHF_3、CHF_3／C_6H_6气体ECR放电等离子体的特性及氟化非晶碳薄膜(a-C：F)的结构与等离子体空间基团分布的关系。
6) Hydrogenated amorphous carbon films
氢化非晶碳薄膜
补充资料：稀土-铁族金属非晶薄膜磁光材料
分子式：
CAS号：
性质：用稀土和铁族金属制成的薄膜磁光材料其组成、电和磁性能及单轴各向异性受沉积条件及靶材成分影响。非晶态霍耳电压(VH)与磁场关系和极向克尔磁带回线相似，在补偿温度(Tcomp)附近，霍尔系数R1改变符号，当T<Tcomp时，R1为负，相反为正。其制备方法为高频溅射、真空蒸发、磁控溅射等。
CAS号：
性质：用稀土和铁族金属制成的薄膜磁光材料其组成、电和磁性能及单轴各向异性受沉积条件及靶材成分影响。非晶态霍耳电压(VH)与磁场关系和极向克尔磁带回线相似，在补偿温度(Tcomp)附近，霍尔系数R1改变符号，当T<Tcomp时，R1为负，相反为正。其制备方法为高频溅射、真空蒸发、磁控溅射等。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条