1) ferroelectric random access memories (FeRAM)
铁电随机存储器
1.
Recently, rare-earth lanthanides doped Bi4Ti3Oi2 (BIT) with Bi-layered perovskite structure has been studied intensively for potential applications in ferroelectric random access memories (FeRAM) due to its relatively low crystallization temperature, good fatigue endurance and larger spontaneous polarization compared to SrBi2Ta2O9 (SBT)-based films.
近年来，稀有金属离子掺杂的钛酸铋(Bi_4Ti_3O_(12)，简写为BTO)铁电薄膜成为研究的热点，这种材料结晶温度较低、抗疲劳特性好、自发极化较大(相对SrBi_2Ta_2O_9薄膜来说)，所以可望成为新的铁电随机存储器(FRAM)专用材料。
2) ferroelectric random access memory (FeRAM)
铁电随机存储器(FeRAM)
3) FEDRAM
铁电动态随机存储器
1.
A Modified Macro Model of FEFET for FEDRAM Application
模拟结果与FEFET实验结果比较,显示该模型能够很好地反映铁电材料的疲劳等因素引起的FEFET的存储性能退化,为FEDRAM(铁电动态随机存储器)设计和优化提供了一个良好的模型基础。
4) FRAM (Ferromagnetic RAM )
铁磁随机存储器
5) ferroelectric random access memo-ry
铁电动态随机存取存储器
6) NvRAM
非挥发性铁电随机存储器
1.
Ferroelectric thin films have attracted much attention in recent years for nonvolative random-access memory (NvRAM) devices, but each of the promising candidates has its own drawbacks for practical applications.
非挥发性铁电随机存储器是铁电薄膜的主要应用之一。
补充资料：随机存取存储器(见半导体存储器)
随机存取存储器(见半导体存储器)
random access memory,RAM
s日1}}Cunq日Ct旧choql随机存取存储器random aeeess memoryRAM)见半导体存储器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条