1) Charge Pump Random-Access Memory
电荷泵随机存储器
3) ferroelectric random access memories (FeRAM)
铁电随机存储器
1.
Recently, rare-earth lanthanides doped Bi4Ti3Oi2 (BIT) with Bi-layered perovskite structure has been studied intensively for potential applications in ferroelectric random access memories (FeRAM) due to its relatively low crystallization temperature, good fatigue endurance and larger spontaneous polarization compared to SrBi2Ta2O9 (SBT)-based films.
近年来，稀有金属离子掺杂的钛酸铋(Bi_4Ti_3O_(12)，简写为BTO)铁电薄膜成为研究的热点，这种材料结晶温度较低、抗疲劳特性好、自发极化较大(相对SrBi_2Ta_2O_9薄膜来说)，所以可望成为新的铁电随机存储器(FRAM)专用材料。
4) RRAM
电阻随机存取存储器
5) RAM
[英][ræm] [美][ræm]
随机存储器
1.
The hardware structural subassemblies of FP13-Z6 13 return micro controller is introduced, (Such as ROM, RAM, the allotment plan of adress and bus, the key board, displayer,SIO, A/D, D/A and the change signal of input output), and their principle of operation isanalyzed.
介绍了只读程序存储器、随机存储器的结构，地址，总线分配方式。
2.
RAM is used widely in electrical equipment, so RAM testing is a key part for built-in test and functional test.
随机存储器在电子装备中广泛使用,对其进行有效测试是电子装备自测试与生产功能测试的主要内容。
补充资料：随机存取存储器(见半导体存储器)
随机存取存储器(见半导体存储器)
random access memory,RAM
s日1}}Cunq日Ct旧choql随机存取存储器random aeeess memoryRAM)见半导体存储器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条