1) rf PECVD
射频PECVD
1.
In this article we successfully synthesized diamond-like carbon (DLC) films on the stainless steel, glass and silicon substrates using C4H10(or CH4) and argon as source gases by radio frequency plasma enhanced chemical vapor deposition (rf PECVD) process.
本文采用射频PECVD方法,以C4H10(或CH4)和Ar为气源在不锈钢、玻璃和硅片等基底上制备出大面积类金刚石薄膜。
2) PECVD
PECVD法
1.
Amorphous silicon films prepared by PECVD on the glass substrate have been crystallized by conventional furnace annealing(FA) at middle temperature.
用PECVD法直接沉积的非晶硅(a-S i:H)薄膜用传统炉在中温退火,然后用拉曼光谱、XRD和SEM分析,发现晶粒大小随退火温度和退火时间呈现量子态现象。
2.
Undoped amorphous silicon film deposited by PECVD at 30℃,350℃,450℃ substrate temperatures,annealed at 850℃ by conventional furnace for 3h and pulsed rapid thermal method for 5min was studied by using Raman,XRD and SEM.
为研究传统炉子退火与光退火固相晶化的不同特点,用石英玻璃作衬底,在室温、350℃和450℃下用PECVD法直接沉积非晶硅(a-S i:H)薄膜,把沉积的样品分别在850℃下用传统炉子退火3h、用光快速热处理(RTP)5m in,然后用Ram an、XRD和SEM分析对比,发现传统炉子退火后的晶粒分布不均匀,光退火后的晶粒分布均匀。
3.
Undoped amorphous silicon film deposited by PECVD at the temperature 200,250,300,350,400,450?℃ and stored for three months,then annealed at 450℃ has been studied by using micro-Raman scattering.
通过PECVD法,用玻璃作衬底在200,250,300,350,400,450℃下直接沉积非晶硅(a-Si:H)薄膜,并在避光状态下贮存3个月,把前后样品用拉曼光谱分析,发现非晶硅峰值480 cm-1基本消失;在石英玻璃100℃下沉积非晶硅薄膜在700℃下10 min,700℃下20 min,750℃下2 min,850℃下1 min;850℃下1 min,850℃下2 min,850℃下5 min,850℃下10 min分别用卤钨灯光照退火,发现850℃下5 min已经充分结晶。
3) MO-PECVD technique
MO-PECVD
4) very-high-frequency plasma enhanced chemical vapor deposition(VHF-PECVD)
甚高频等离子体化学气相沉积(VHF-PECVD)
5) VHF-PECVD
甚高频等离子体增强化学气相沉积(VHF-PECVD)
1.
This paper studies the deposition of the transition p layer (from microcrystalline phase to amorphous phase) as window layer in high-rate deposition of amorphous silicon thin film solar cells by using very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD).
研究了采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术沉积从微晶相向非晶相相变的过渡区p层,并将其作为电池的窗口层应用到高速沉积的非晶硅薄膜电池中。
6) PECVD technique
PECVD技术
1.
Sillicon nanocrystals embedded in a－ SiO_x:H (0 PECVD technique and high－ temperature annealing treatment.
采用 PECVD技术制备的 a－ SiO_x:H (0 SiO_x:H基质的量子点复合膜（ nc－ Si/a－ SiO_x:H）。
补充资料：肺癌经皮肿瘤内射频治疗
肺癌经皮肿瘤内射频治疗
介入放射学技术。在经皮穿刺活检技术上发展起来的一种用高频电磁波治疗肺癌的方法。在活检以后，通过保留的穿刺针将高频电磁场导入肿瘤内施行辐射，射频电磁波在生物介质中产生的热及非热效应可凝固癌组织，杀死癌细胞。根据肿瘤的大小，可分别采取单点和多点辐射，使肿瘤破坏更彻底。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条