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1)  SiGe/Si MQW
SiGe/Si多量子阱
2)  SiGe/Si quantum well
SiGe/Si量子阱
1.
The mechanism of the near-band-gap optical transition in doped SiGe/Si quantum well is investigated, and the model of the near-band-gap optical transition originated from the statistical distribution of the impurities is suggested.
本文研究了SiGe/Si量子阱中近带边光跃迁的产生机制,对由杂质无规分布引起的近带边光跃迁给出了一个物理模型。
3)  a Si/SiO 2 multiple quantum well
a-Si/SiO_2多量子阱
4)  GeSi/Si MQW
GeSi/Si多量子阱
5)  Si/SiNx multiple quantum-wells
Si/SiN_x多量子阱
6)  nc-Si/SiNx MQW
nc-Si/SiNx多量子阱材料
1.
Nonlinear optical properties of nc-Si/SiNx MQW were probed by a Z-Scan Technique.
采用射频磁控反应溅射技术与热退火处理制备了nc-Si/SiNx多量子阱材料。
补充资料:多量子阱(见量子阱)


多量子阱(见量子阱)
multiple quantum well

多t子阱multiple quanturn well见量子阱。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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