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1)  silicon nanowires
Si纳米线
1.
The process of nickel film growth on the silicon nanowires was studied.
研究了Si纳米线表面Ni薄膜生长工艺。
2.
In this paper,we mainly introduce and review some new progresses for the fabricated technology of silicon nanowires based on vapor-liquid-solid(VLS),vapor-solid-solid(VSS),solid-liquid-solid(SLS) and oxide-assisted growth(OAG) mechanisms.
以气-液-固(VLS)、气-固-固(VSS)、固-液-固(SLS)和氧化物辅助生长(OAG)机制为主线,着重介绍与评论了几种主要的Si纳米线的制备方法,如激光烧蚀沉积(LAD)、化学气相沉积(CVD)、热蒸发和金属(Au,Fe,Ni和Al)催化生长等。
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2)  Si-based nanowires
Si基纳米线
1.
Preparation of one dimension, two dimension and three dimension Si- based nanowires;
一维,二维和三维Si基纳米线的制备
3)  nano-silicon
纳米Si(n-Si)
4)  Si nanocrystals SiO_x
纳米Si-SiO_x
5)  nano-crystalline Si
纳米晶Si
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6)  Si nanocrystals
Si纳米晶
1.
In this thesis, Si nanocrystals were obtained by reactive sputtering and thermal activated reaction, and its photoluminescence properties, microstructure, phase structure and surface bond structure were measured and analyzed.
本论文分别采用了反应溅射法和热活性法两种途径制备Si纳米晶,对其光致发光性能、微观组织、相结构和表面价键进行了分析,并对纳米晶的发光机理进行研究。
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补充资料：维纳斯（米洛斯）(Weinɑsi
    　　见阿佛洛狄忒(米洛斯)。
　　

说明：补充资料仅用于学习参考，请勿用于其它任何用途。
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