1) Si nanoparticles
纳米Si晶粒
1.
Determination of the region where Si nanoparticles form during pulsed laser ablation;
脉冲激光烧蚀制备纳米Si晶粒成核区位置的确定
2.
Influence of the ambient pressure of Ar on the average size of Si nanoparticles deposited by pulsed laser ablation;
Ar环境气压对脉冲激光烧蚀制备纳米Si晶粒平均尺寸的影响
3.
Relation between target-substrate separation and size-uniformity of Si nanoparticles prepared by laser ablation;
激光烧蚀制备纳米Si晶粒尺寸均匀性与靶衬间距的关系
2) Er-doped nanocrystalline Si film
掺Er纳米Si晶粒
4) Si nanocrystals
Si纳米晶
1.
In this thesis, Si nanocrystals were obtained by reactive sputtering and thermal activated reaction, and its photoluminescence properties, microstructure, phase structure and surface bond structure were measured and analyzed.
本论文分别采用了反应溅射法和热活性法两种途径制备Si纳米晶,对其光致发光性能、微观组织、相结构和表面价键进行了分析,并对纳米晶的发光机理进行研究。
5) nanograin polycrystalline silicon films
纳米晶粒多晶Si 薄膜
6) ordered Si-based nanocrystalline films
晶粒有序Si基纳米材料
1.
The involved contents indude the design of direct bandgap Si-based low dimensional materials, fabrication of ordered Si-based nanocrystalline films and approach of stable and high-efficient Si-based light.
本文尝试性地评论了这一集Si材料技术、纳米技术、微电子技术以及光电子技术为一体的新型交叉学科,近年来在直接带隙Si基低维材料的设计、晶粒有序Si基纳米材料的制备与稳定高效Si基发光器件的探索等方面所取得的若干重要研究进展,并预测了全Si光电子集成技术的未来发展趋势。
补充资料：维纳斯（米洛斯）(Weinɑsi
见阿佛洛狄忒(米洛斯)。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条