1) strained quantum well structure
应变量子阱结构
2) periodical strain balance quantum well structure
周期应变平衡量子阱结构
3) quantum well structures
量子阱结构
1.
56)/InP quantum well structures was calculated by using 4×4 Luttinger-Kohn Hamiltonian matrix under effective mass frame.
56 /InP量子阱结构进行了能带计算 ,求得了该量子阱结构跃迁能量随组份及阱宽的变化关系 ,从而得到了激射波长 1。
4) quantum well structure
量子阱结构
1.
The GaAlAs/GaAs material with gradient refraction index separate confinement single quantum well structure has been grown by MBE method.
利用分子束外延生长法生长出了ＧａＡｌＡｓ／ＧａＡｓ梯度折射率分别限制单量子阱结构材料。
2.
Its self-assembling quantum well structures of.
其结构特征是形成了无机半导体层和有机层交替堆积的量子阱结构,从而具有较大的激子结合能和优异的光、电、磁性能,显示出广阔的应用前景;同时,对该类材料的研究,必将推动半导体材料理论的发展,引起科学界的广泛关注。
5) quantum-well structure
量子阱结构
1.
The development of the organic quantum-well structure devices was introduced systemically.
制备了普通的有机量子阱结构 ,并对结构进行了表征。
6) strained quantum well
应变量子阱
1.
Effect of Auger recombination on the threshold current of strained quantum well laser;
俄歇复合对应变量子阱激光器阂值电流的影响
2.
using gigh purity sources of - metals,We got the high quality Al Ga In As/ In P strained quantum well,with little oxide concentration,large intensity of PL (PL =0 .
用低压金属有机化学气相沉积 (L P- MOCVD)设备生长了 Al Ga In As压应变量子阱材料、应变补偿量子阱材料并进行了材料特性的测试 ,通过二次离子质谱仪 (SIMS)的测试讨论了材料中氧含量对材料特性的影响 ,通过采用高纯原料和纯化载气 ,生长出了较高质量的 Al Ga In As应变量子阱材料 :氧含量小 ,光荧光强度大 (2 5 m W,PL=0 。
3.
7dB noise figure of SOA coupled with fiber directly in both ends under 130mA bias current shows that the noise figure is improved by strained quantum well structure.
研究了直接耦合混合应变量子阱 Ｓ Ｏ Ａ 的噪声特性。
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条