1) strain-compensated quantum well
应变补偿量子阱
1.
AlGaInAs strain-compensated quantum wells have been grown by LP-MOVPE.
通过低压金属有机化学气相外延 (LP MOVPE)工艺生长了AlGaInAs应变补偿量子阱材料 ,通过X射线双晶衍射、光荧光、二次离子质谱的测试分析得到了材料生长的优化工艺参数 ,降低了材料中的氧杂质含量 ,得到了高质量AlGaInAs应变补偿量子阱材料 ,室温光致发光半宽FWHM =2 6meV。
2) strain-compensated multi-quantum well
应变补偿多量子阱
1.
This laser is composed of a wafer-bonded GaAs/Al(Ga)As distributed Bragg reflector (DBR) and a dielectric SiO2/TiO2 DBR with InAsP/InGaAsP strain-compensated multi-quantum wells grown in the cavity.
采用InAsP/InGaAsP应变补偿多量子阱作为有源增益区,由晶片直接键合技术融合InP基谐振腔和GaAs基GaAs/Al(Ga)As分布布拉格下反射腔镜,并由电子束蒸发法沉积SiO2/TiO2介质薄膜上反射腔镜形成1。
3) strained quantum well
应变量子阱
1.
Effect of Auger recombination on the threshold current of strained quantum well laser;
俄歇复合对应变量子阱激光器阂值电流的影响
2.
using gigh purity sources of - metals,We got the high quality Al Ga In As/ In P strained quantum well,with little oxide concentration,large intensity of PL (PL =0 .
用低压金属有机化学气相沉积 (L P- MOCVD)设备生长了 Al Ga In As压应变量子阱材料、应变补偿量子阱材料并进行了材料特性的测试 ,通过二次离子质谱仪 (SIMS)的测试讨论了材料中氧含量对材料特性的影响 ,通过采用高纯原料和纯化载气 ,生长出了较高质量的 Al Ga In As应变量子阱材料 :氧含量小 ,光荧光强度大 (2 5 m W,PL=0 。
3.
7dB noise figure of SOA coupled with fiber directly in both ends under 130mA bias current shows that the noise figure is improved by strained quantum well structure.
研究了直接耦合混合应变量子阱 Ｓ Ｏ Ａ 的噪声特性。
4) strained quantum wells
应变量子阱
1.
Calculation of band structure of Ga_x In_1-x_As/GaInAsP strained quantum wells;
Ga_xIn_(1-x)As/GaInAsP应变量子阱结构能带的计算
2.
31 μm waveband semiconductor optical amplifier (SOA) based on tensile strained quantum wells and compress strained quantum wells.
报道了基于混合应变量子阱材料的半导体光放大器 (SOA)。
3.
A review is presented of vertical cavity surface emitting lasers(VCSELs),outlining the main structural properties strained quantum wells,microcavity effects,recent developments in the fabrication oxide confined VCSELs,ways to decrease the threshold current of the increase of spontaneous emission,and the properties of three dimensionally closed cavities.
评述了垂直腔面发射半导体激光器研究的最新进展，就其结构特点、应变量子阱结构、超晶格镜面和微腔效应作了简要的论述，探讨了进一步降低半导体激光器阈值的途径，介绍了新型的氧化约束型垂直腔面发射半导体激光器，并对微腔激光器中自发辐射增强效应和三维封闭腔的特性给出了描述，同时展望了该器件的应用及发展前景。
5) mix strained quantum wells
混合应变量子阱
6) strained multiple quantum wells
应变多量子阱
1.
To investigate the influence of dry etching on strained multiple quantum wells (SMQWs),we etch the cap layer of metalorganic chemical vapor phase deposition (MOCVD) grown InGaN/AlGaN SMQWs about 95 nm by inductively coupled plasma (ICP).
为了分析干法刻蚀对应变多量子阱(SMQWs)发光特性的影响,采用感应耦合等离子体(ICP)刻蚀技术对金属有机物化学气相沉积(MOCVD)生长的InGaN/AIGaN应变多量子阱覆盖层表面刻蚀了约95 nm。
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条