1) strained single quantum well
应变单量子阱
1.
Materials of InGaAs/GaAs/AlGaAs separate confinement heterostruc ture strained single quantum well were grown successfully by the technology of M etal Organic Chemical Vapor Deposition (MOCVD).
利用金属有机化合物气相淀积 ( MOCVD)技术成功生长了 In Ga As/Ga As/Al Ga As分别限制应变单量子阱材料 ,用该材料制成的单管半导体激光器在室温下连续波输出功率高达 2 。
2) strained quantum well
应变量子阱
1.
Effect of Auger recombination on the threshold current of strained quantum well laser;
俄歇复合对应变量子阱激光器阂值电流的影响
2.
using gigh purity sources of - metals,We got the high quality Al Ga In As/ In P strained quantum well,with little oxide concentration,large intensity of PL (PL =0 .
用低压金属有机化学气相沉积 (L P- MOCVD)设备生长了 Al Ga In As压应变量子阱材料、应变补偿量子阱材料并进行了材料特性的测试 ,通过二次离子质谱仪 (SIMS)的测试讨论了材料中氧含量对材料特性的影响 ,通过采用高纯原料和纯化载气 ,生长出了较高质量的 Al Ga In As应变量子阱材料 :氧含量小 ,光荧光强度大 (2 5 m W,PL=0 。
3.
7dB noise figure of SOA coupled with fiber directly in both ends under 130mA bias current shows that the noise figure is improved by strained quantum well structure.
研究了直接耦合混合应变量子阱 Ｓ Ｏ Ａ 的噪声特性。
3) strained quantum wells
应变量子阱
1.
Calculation of band structure of Ga_x In_1-x_As/GaInAsP strained quantum wells;
Ga_xIn_(1-x)As/GaInAsP应变量子阱结构能带的计算
2.
31 μm waveband semiconductor optical amplifier (SOA) based on tensile strained quantum wells and compress strained quantum wells.
报道了基于混合应变量子阱材料的半导体光放大器 (SOA)。
3.
A review is presented of vertical cavity surface emitting lasers(VCSELs),outlining the main structural properties strained quantum wells,microcavity effects,recent developments in the fabrication oxide confined VCSELs,ways to decrease the threshold current of the increase of spontaneous emission,and the properties of three dimensionally closed cavities.
评述了垂直腔面发射半导体激光器研究的最新进展，就其结构特点、应变量子阱结构、超晶格镜面和微腔效应作了简要的论述，探讨了进一步降低半导体激光器阈值的途径，介绍了新型的氧化约束型垂直腔面发射半导体激光器，并对微腔激光器中自发辐射增强效应和三维封闭腔的特性给出了描述，同时展望了该器件的应用及发展前景。
4) mix strained quantum wells
混合应变量子阱
5) strained multiple quantum wells
应变多量子阱
1.
To investigate the influence of dry etching on strained multiple quantum wells (SMQWs),we etch the cap layer of metalorganic chemical vapor phase deposition (MOCVD) grown InGaN/AlGaN SMQWs about 95 nm by inductively coupled plasma (ICP).
为了分析干法刻蚀对应变多量子阱(SMQWs)发光特性的影响,采用感应耦合等离子体(ICP)刻蚀技术对金属有机物化学气相沉积(MOCVD)生长的InGaN/AIGaN应变多量子阱覆盖层表面刻蚀了约95 nm。
6) crystalline damage
应变多量子阱
1.
Plasma etching ofⅢ-Ⅴsemiconductors and mechanism of crystalline damage;
采用感应耦合等离子体(ICP)刻蚀技术对InGaN/AlGaN、InAsP/InP应变多量子阱和InAsP/InGaAsP应变单量子阱进行了系统研究,光致发光特性分析表明轻度离子刻蚀后量子阱发光强度得到显著增强,导致发光效率增强的物理机理是:干法刻蚀一方面使量子阱表面变粗糙,使出射光逃逸几率增大;另一方面Ar离子隧穿引起的量子阱内部微结构变化则是发光效率提高的主要原因。
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条