1) energy band
能带论
1.
In teaching solid physics, after anologing solid energy band to photonic crystal band(PB), we make students to understand the concept of solid energy band more easily and perfectly.
通过对固体物理能带结构的形成与光子晶体禁带形成的类比 ,使固体物理能带论的教学过程更加具体化、形象化 ,使学生逐步形成发散性思维。
2) Band
能带
1.
It shows that,for the one-dimensional photonic crystals,there are abnormal refraction in the first band.
结果表明,对于一维光子晶体,在第一能带内,存在反常折射现象。
2.
The electronic and energy-band structures of the title alloys have been studied by using the tight-binding method within the extended Huckel approximation(EHT).
用紧束缚能带计算方法(EHT)研究了标题多元合金的能带及电子结构。
3.
The electronic structure of a quaternary alloy has been investigated using EHT band calculation method.
用ＥＨＴ紧束缚能带计算方法，研究了四元合金的电子结构。
3) energy band
能带
1.
A simplified calculation of the energy band structure for a diamond-type crystal;
金刚石型晶体能带的计算
2.
The energy band structure of AgBr crystal;
AgBr晶体的能带结构
3.
The material has good application potentials because of its designable structure and controllable energy band structure.
层状类钙钛矿结构有机-无机杂合物是由有机、无机组元在分子尺度上组装而成的一类新材料,其结构和能带具有可设计可控性,因此应用前景广阔。
4) band structure
能带
1.
Meantime,the energy band structures and densi- ty of state of poly(2,5-pyridinediyl)(PPY)were analyzed.
采用密度泛函(DFT)B3LYP方法,在6-31G*基组水平对聚吡啶分子PPY进行计算,找出了结构稳定性与电子性质的变化规律;并对其能带结构与态密度进行了分析与探讨。
2.
The effects of inhomogeneous strain on the band structure and TE mode gain were studied for low dimensional quantum systems.
研究了非均匀应变对低维量子结构的能带和ＴＥ模光增益所产生的影响。
3.
Then,the calculations for band structure and the density of states are carried out.
采用第一原理的密度泛函理论,计算了NaSrBO3的电子结构,通过分析能带结构图,我们得出物质的带隙宽度为4。
5) energy bands
能带
1.
The energy dispersion relations and wave functions of armchair carbon nanotubes under axial strain were derived analytically,the affluence of axial strain on the energy bands,Fermi wave vector,Fermi dot and effective mass near Fermi face of armchair carbon nanotubes were investigated.
解析推导了轴向拉伸情况下扶手椅型碳纳米管的能量色散关系和波函数,并分析了轴向拉伸对扶手椅型碳纳米管能带、导电性能、费米波矢、费米点及费米面处的有效质量的影响。
2.
The photo-induced voltage between the back etching and edge etching silicon were compared, explaining the difference by means of the theory of energy bands.
采用正面无保护的背腐蚀方法分离p-n结,用SEM图观察了背腐蚀后硅片表面形貌的变化,对背腐蚀与刻边分离p-n结样品的光生电动势进行了比较,用能带理论对其差别做了深入的解释。
6) energy band structure
能带结构
1.
Crystal and energy band structure of (PyH)[M(dmit)_2]_2 (M=Pd, Ni);
分子导体(PyH)[M(dmit)_2]_2(M=Pd,Ni)的晶体结构与能带结构
2.
Study on the energy band structures of transition metal phthalocyanines;
过渡金属酞菁化合物的能带结构研究
3.
The Hypothesis of “protein of channels and collaterals energy band structure”;
“经络蛋白能带结构”假说
参考词条
补充资料：论能
1.识别贤能。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。