1) electroluminescence spectrum
电致发光光谱
1.
Through electroluminescence spectrum analysis of organic electroluminescence ITO/TPD/Alq3/Al device, 5 nm red shift for Alq3 fluorescence peak has been found, which indicates that exciplex luminescence of interface of TPD/Alq3 leads to this result.
对结构为ITO／TPD／Alq3／Al的有机电致发光器件电致发光光谱分析,发现与Alq3的荧光峰相 比发生了约5 nm红移,从而推断是由于TPD／Alq3界面处形成的激基复合物发光所致。
2) electroluminescence (EL) spectra
电致发光(EL)光谱
3) photoluminescence spectra
光致发光谱
1.
Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions;
离子注入n型GaN光致发光谱中宽黄光发射带研究
2.
The influence of MgF_2 doping on the luminescence properties of lead tungstate(PbWO_4,PWO)crystal has been investi- gated by correlated measurements of transmission spectra and photoluminescence spectra and light yield.
通过透射光谱、光致发光谱、光产额的测试,研究了提拉法生长的掺MgF_2的钨酸铅(PbWO_4,PWO)晶体的发光性能。
3.
Photoluminescence spectra peaks as a function.
本文通过Ⅱ－Ⅵ族稀磁半导体超晶格ＺｎＳｅ／Ｚｎ１－ｘＭｎｘＳｅ的光致发光谱的测量，对其应力效应进行了讨论。
4) photoluminescence spectrum
光致发光谱
1.
The synthesized powder was characterized by X -ray powder diffraction, high resolution transmission electron microscopy(HRTEM) and photoluminescence spectrum.
测量了合成粉末的X射线衍射谱、光致发光谱和高分辨透射电子显微像 (HRTEM) ,发现合成的粉末是平均粒度为 3 2nm的纤锌矿结构的氮化铝 ,此AlN中存在蓝光发光带 。
5) photoluminescence
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光致发光谱
1.
15) by magnetron sputtering and studied the transmittance and photoluminescence of the samples.
研究光的透过率和光致发光谱(PL谱)。
2.
Compared with the absorbance spectrum, the photoluminescence excited by laser with λ=395nm has Stokes shift.
与薄膜的吸收谱线比较,在375nm飞秒激光激发下测量的量子点的光致发光谱存在Stokes位移。
3.
The structural and optical properties were characterized with X-ray diffraction(XRD)and photoluminescence(PL),respectively.
利用X射线衍射(XRD)和光致发光谱(PL)对薄膜的结构和光学性能进行研究。
6) PL
光致发光谱
1.
By means of optical absorption,photoluminescence(PL),and ellipsometric spectra,metal organic chemical vapor deposition(MOCVD)grown InN films are investigated.
利用吸收光谱、光致发光谱、喇曼散射光谱和椭圆偏振光谱一系列光学手段,对采用金属有机物气相沉积法(MOCVD)制备的InN薄膜的光学性质进行了系统研究。
2.
The crystallization of the top Si layer in SIMOX,especia ll y the behavior of residual oxygen in the top Si layer,is investigated by means o f PL and SIMS,with the sample of P type(100) Si.
利用光致发光谱 (PL)和二次离子质谱 (SIMS)检测了不同退火条件下处理的 SIMOX材料的顶层硅膜 。
3.
Properties of Al-doped 4H-SiC epitaxial layer,grown by CVD on the 4H-SiC were studied using scanning electron microscope(SEM),X-ray diffraction(XRD)and photoluminescence(PL).
利用扫描电子显微镜(SEM)、X射线双晶衍射谱(XRD)和光致发光谱(PL)对在4H-SiC单晶衬底上采用CVD同质外延的4H-SiC单晶薄膜的特性进行研究,发现外延层有很好的晶格结构和完整性。
补充资料：电致发光显示材料(见电致发光材料)
电致发光显示材料(见电致发光材料)
electroluminescent display materials
蒸敷棘巍 diSPlay 又称场致 质的粉末
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条