1) dextral slip and offset
右旋位错运动与位错量
2) dislocation movement
位错运动
1.
Meanwhile,the addition of Ca/Y and further impediment of the dislocation movement due to more .
1%Y(质量分数,下同)变质处理后的细晶强化和固溶强化作用提高了合金的拉伸强度和延伸率,同时由于Ca/Y元素的加入及晶界数量增多对位错运动的进一步阻碍作用降低了合金的应变振幅效应,从而降低了其阻尼性能;研究还发现Mg-0。
3) dislocation motion
位错运动
1.
To investigate the dislocation motion characteristics in low-temperature(LT) buffer during the growing process of lattice mismatched heterostructure,a 60° dislocation dipole and 5 types of ring-shaped hexagonal vacancy defects with their different relative positions to the dislocation are modeled in a Si crystal via molecular dynamics simulation.
为了研究晶格常数不匹配的异质结结构(Si1-xGex/Si)在生长过程中低温缓冲层内的位错运动特性,在Si晶体中建立了60°位错偶极子,以及相对于位错不同空间位置的5种六边形环状空位缺陷模型。
2.
To get the screw dislocation motion characteristic in the growing process of lattice mismatched heterostructures,a pair of screw dislocations is introduced in a full periodic Si crystal via dislocation dipole modeling.
通过Parrinello-Rahman方法对模型施加剪应力,并应用分子动力学计算位错运动速度及交滑移的发生与外加剪应力间的关系。
3.
We investigate the characteristics of dislocation motion as influenced by defects in a low temperature buffer during the growth of lattice-mismatched heterostructures(SiGe/Si).
为了研究晶格常数不匹配的异质结SiGe/Si生长过程中低温缓冲层内缺陷对位错运动的影响,使用位错偶极子模型在Si晶体内建立了一对30°部分位错,和导致30°部分位错运动的弯结结构,以及位错芯重构缺陷(RD)与弯结组合而生成的弯结-RD结构。
4) dislocation and disclination
位错与向错
5) Screw dislocation
螺旋位错
1.
First, {104} plane of calcite crystallite containing screw dislocation is simulated by HyperChem according to growth shape of calcite.
首先,根据方解石晶体生长形貌,通过分子模拟软件生成有螺旋位错的方解石{104}面,同时基于半经验分子轨道理论,对离解后的HEDP结构优化以获得其部分电荷分布。
2.
By observing the {100} faces morphology of DKDP crystal grown in all three dimensions with atom force microscope,screw dislocations were found.
采用原子力显微镜观测全方位生长的DKDP晶体的{100}面形貌,发现有螺旋位错,由此推断DKDP晶体{100}面以螺旋位错机制生长;利用同步辐射X射线白光形貌术观测了DKDP晶体缺陷,探讨了不同生长条件及生长阶段对晶体完整性的影响。
3.
On the crystal surfaces of the beryl crystal at ｛0001｝,｛1010｝,｛1121｝ occur universally screw dislocation,constriction screw dislocation,stacking fault,and contact twin that serve as the major step like source for the growth of beryl crystal.
在绿柱石晶体的 { 0 0 0 1}、{ 10 10 }、{ 112 1}面上 ,普遍发育螺旋位错、束合螺旋位错、层错及接触双晶 ,它们共同构成了绿柱石晶体生长的主要台阶源。
6) Vortex dislocation
旋涡位错
补充资料：位错
（见晶体缺陷）。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条