1) moving point dislocation method
运动点位错法
1.
Some theoretical methods - bearing capacitytheory, cavity expansion theory, strain path method, moving point dislocation method - are reviewed, togetherwith the developments of numerical analysis and experimental research.
从不同角度,对触探中锥头阻力的研究进行简要阐述,对承载力理论、空洞膨胀理论、应变路径法及运动点位错法等几种理论分析方法进行了回顾。
2) dislocation movement
位错运动
1.
Meanwhile,the addition of Ca/Y and further impediment of the dislocation movement due to more .
1%Y(质量分数,下同)变质处理后的细晶强化和固溶强化作用提高了合金的拉伸强度和延伸率,同时由于Ca/Y元素的加入及晶界数量增多对位错运动的进一步阻碍作用降低了合金的应变振幅效应,从而降低了其阻尼性能;研究还发现Mg-0。
3) dislocation motion
位错运动
1.
To investigate the dislocation motion characteristics in low-temperature(LT) buffer during the growing process of lattice mismatched heterostructure,a 60° dislocation dipole and 5 types of ring-shaped hexagonal vacancy defects with their different relative positions to the dislocation are modeled in a Si crystal via molecular dynamics simulation.
为了研究晶格常数不匹配的异质结结构(Si1-xGex/Si)在生长过程中低温缓冲层内的位错运动特性,在Si晶体中建立了60°位错偶极子,以及相对于位错不同空间位置的5种六边形环状空位缺陷模型。
2.
To get the screw dislocation motion characteristic in the growing process of lattice mismatched heterostructures,a pair of screw dislocations is introduced in a full periodic Si crystal via dislocation dipole modeling.
通过Parrinello-Rahman方法对模型施加剪应力,并应用分子动力学计算位错运动速度及交滑移的发生与外加剪应力间的关系。
3.
We investigate the characteristics of dislocation motion as influenced by defects in a low temperature buffer during the growth of lattice-mismatched heterostructures(SiGe/Si).
为了研究晶格常数不匹配的异质结SiGe/Si生长过程中低温缓冲层内缺陷对位错运动的影响,使用位错偶极子模型在Si晶体内建立了一对30°部分位错,和导致30°部分位错运动的弯结结构,以及位错芯重构缺陷(RD)与弯结组合而生成的弯结-RD结构。
4) point-to-point movement
点位运动
5) kinetics of dislocation motion
位错运动动力学
6) dextral slip and offset
右旋位错运动与位错量
补充资料：错法
1.设立法度﹐推行法制。错﹐通"措"。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条