1) Al free
无Al有源层
2) passive and active
无源有源
3) active lossless
有源无损
4) active layer
有源层
1.
Influence of lithography before or after crystallization of active layer on the properties of poly-Si TFT;
晶化前后有源层的刻蚀对poly-Si TFT性能的影响
2.
The study of the active layer, the insulator layer, the ohmic contact layer, and the interface of a Si∶H/a SiN x ∶H in a Si TFT devices were presented in this paper The single a Si TFT device was prepared, which ratio of on to off current reached to six orders of magnitude This work laid a solid foundation for a Si∶H TFT AM LCD used for video displa
介绍了 ａ Ｓｉ∶ Ｈ Ｔ Ｆ Ｔ 开关器件的有源层、栅绝缘层、欧姆接触层以及界面特性的研究工作。
3.
The device properties of copper phthalocyanine(CuPc)-based top contact organic thin film transistors(OTFTs) with various active layer thickness were investigated.
研究了不同厚度有源层的顶电极CuPc OTFT器件的电学特性。
5) Al-free active region
无铝有源区
1.
InGaAsP/GaInP/AlGaInP Al-free active region materials were grown by MOCVD,and standard quasi-continuous-wave bars were fabricated.
外延生长了InGaAsP/GaInP/AlGaInP无铝有源区808 nm激光器材料,制作了标准准连续(QCW)单条器件。
6) passive active mode
有源无源方式
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