1) semiconductor planar microcavity
半导体平面微腔
1.
Using the transfer matrix scheme,the effects of DBR s growth sequence have been studied on the properties of semiconductor planar microcavity,in particular on the spatial position of the amplifier maximum of electric field and the mode selection properties of the photon field.
从光学传输矩阵方法出发 ,研究了分布布拉格反射器 (DBR)生长顺序的不同对半导体平面微腔中电场振幅极大值位置及整个微腔选频特性的影响 ;同时指出了 DBR对于λ0 / 2和λ0 腔不同情况的最佳生长模
2) semiconductor planar micro-cavity
半导体平板微腔
3) semiconductor microcavity
半导体微腔
1.
Coupling between cavity mode and heavy-hole exciton and light-hole exciton in semiconductor microcavity;
半导体微腔中腔模、重空穴激子模和轻空穴激子模耦合
2.
The quantum dynamics of an exciton dressed by acoustic phonons in an optically driven quantum dot-semiconductor microcavity at finite temperatures is investigated theoretically by quantum optics methods.
采用量子光学和极化子正则变换的方法研究了有限温度下半导体微腔中单量子点的激子动力学行为,并解析得到了激子真空拉比分裂随温度变化的函数关系。
3.
In the far from cutoff approximation the energies of empty cavity modes vs radii of three-dimension semiconductor microcavity are evaluated.
半导体微腔中腔模和激子模耦合形成腔极化激元 ,三维微腔中由于横向限定腔模和激子模形成离散化的本征模式 。
4) Semiconductor optical microcavities
半导体光学微腔
5) planar microcavity
平面微腔
6) micro-cavity semiconductor laser
微腔半导体激光器
1.
For micro-cavity semiconductor laser, station model is proposed in this paper and its steady-state and instantaneous characteristics when the coupling efficiency of spontaneous emission into a lasing mode is equal to 1 are analysised.
本文对于微腔半导体激光器，提出站模型，能够较直观简洁地分析微腔半导体激光器的稳态和瞬态特性，利用此模型对具有重要实用价值的β=1的微腔半导体激光器进行了讨论；对于电流I噪声、自发发射寿命τ_(sp)噪声、自发发射因子β噪声、光子寿命τ_p噪声，以及电流调制、τ_(sp)调制、β调制、τ_p调制，在小信号近似下，得到了相应的激光器的传递函数；在大信噪比的前提下，对激光器进行了频域分析，分别计算了它们在不同参数下的信噪比增益，分析了其抗噪声性能。
补充资料：半导体导电性(见半导体的导电与电荷输运)
半导体导电性(见半导体的导电与电荷输运)
electrical conductivity of semiconductor
半导体导电性eleetr、ea一conou以，v:‘，_‘ 一J一“。，瓜米早伙鼓幕由乌教着给话_
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条