1) VCSEL
垂直腔表面发射半导体激光器
1.
Rate-equation-based VCSEL Thermal Model and Simulation;
基于速率方程的垂直腔表面发射半导体激光器温度模型与仿真
2.
In order to analyse the laser diode(LD) relevant circuit by a unified manner using any general circuit analytical software(such as PSPICE),this paper describes the model of a vertical-cavity surface-emitting laser(VCSEL) based on the rate equations.
建立了一个垂直腔表面发射半导体激光器(VCSEL)的等效电路模型,该模型以半导体激光器的速率方程为基础,将速率方程表征为由线性电路元件组成的等效电路模型。
3.
Based on the rate equation, a VCSEL model is established, which can simulate the thermal effect and spatial hole burning effect.
建立了一个基于速率方程,考虑了热效应、空间烧孔效应的垂直腔表面发射半导体激光器的模型,并根据其物理和几何特性,通过正交变换简化了速率方程的计算,从而得到一个新的高效的面向系统连接的仿真模型,并将此模型用于激光器和光纤之间的耦合。
2) optically pumped vertical-external-cavity surface-emitting semiconductor lasers
光泵浦垂直外腔面发射半导体激光器
1.
By using these mode-locking devices on novel thin-disk solid state lasers and optically pumped vertical-external-cavity surface-emitting semiconductor lasers(OPS-VECSEL) to obtain high average output power ultrashort pulses are stated,and it is emphasized that the study of high average output power ultrashort pulses laser can be accel.
综述了利用半导体可饱和吸收镜被动锁模薄片式固态激光器及光泵浦垂直外腔面发射半导体激光器,获得高平均输出功率超短脉冲的最新进展,并指出量子点半导体可饱和吸收镜的使用将加速超短高功率脉冲的发展。
3) optically pumped vertical external cavity surface emitting laser
光泵浦半导体垂直外腔面发射激光器
4) optically pumped vertical-external cavity surface emitting semiconductor lasers
光抽运垂直外腔面发射半导体激光器
5) VCSEL
垂直腔面发射半导体激光器
1.
Based on the logarithmic relation of gain on carrier density,the rate equations are described for multi-quantum well of vertical cavity surface emitting lasers(VCSELs) taking into account the influence of nonradiative depopulation rate.
采用光增益与载流子浓度的对数关系,考虑到非辐射复合的影响,从理论上推导出多量子阱垂直腔面发射半导体激光器(VCSEL)的速率方程。
2.
Based on changing the logarithmic relation of gain on carrier density, the rate equations were described for multi-quantum well of vertical cavity surface emitting laser (VCSELs) taking into account the influence of nonradiative depopulation rate.
采用光增益与载流子浓度的对数关系,考虑到非辐射复合的影响,从理论上推导出多量子阱垂直腔面发射半导体激光器(VCSELs)的速率方程。
6) VCSELs
垂直腔面发射半导体激光器
1.
Rate Equation Analysis of the Multi-quantum Well VCSELs;
多量子阱垂直腔面发射半导体激光器的速率方程分析
2.
A review is presented of vertical cavity surface emitting lasers(VCSELs),outlining the main structural properties strained quantum wells,microcavity effects,recent developments in the fabrication oxide confined VCSELs,ways to decrease the threshold current of the increase of spontaneous emission,and the properties of three dimensionally closed cavities.
评述了垂直腔面发射半导体激光器研究的最新进展，就其结构特点、应变量子阱结构、超晶格镜面和微腔效应作了简要的论述，探讨了进一步降低半导体激光器阈值的途径，介绍了新型的氧化约束型垂直腔面发射半导体激光器，并对微腔激光器中自发辐射增强效应和三维封闭腔的特性给出了描述，同时展望了该器件的应用及发展前景。
补充资料：气敏半导体(见传感器半导体材料)
气敏半导体(见传感器半导体材料)
gas sensory sernieonduetor
气敏半导体gas sensory Semieonductor见传感器半导体材料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条