1) μ c SiC
微晶碳化硅
1.
In order to accomplish of OEIC in a full silicon based the μ c SiC were fabricated with C implanted onto crystal silicon,then annealing in high temperture 1 100～1 000 ℃ for 2 h.
研究了 C- Si基底上注 C形成微晶碳化硅 (μ c- Si C)的途径。
2) silicon carbide whisker
碳化硅晶须
1.
The key process parameters for the double-heating synthesis of silicon carbide whiskers with carbon black and SiO2 powders as raw materials are studied.
双重加热法是低成本、大批量合成碳化硅晶须的新技术,合成温度低、合成时间短、生成率高。
2.
The heat conductive silicone rubber with vinyl endblocked polymethylsiloxane as basic gum and silicone nitride(Si_3N_4) of different particle sizes and silicon carbide whisker as fillers was prepared.
以甲基乙烯基硅橡胶为基胶,选用不同粒径氮化硅粒子和碳化硅晶须为填料制备了导热硅橡胶。
3.
The silicon carbide whiskers and platelets are ideal reinforcements of compound materials of ceramic,metal and resin.
碳化硅晶须和晶片都是陶瓷基、金属基、树脂基复合材料的理想增强体,与碳化硅晶须相比,有关碳化硅晶片制备与应用的报道相对较少。
3) silicon carbide whiskers
碳化硅晶须
1.
All kinds of approach and the mechanism to synthesize silicon carbide whiskers are commented on , and the progress of silicon carbide whiskers at home and abroad is also reviewed.
比较详细地介绍了当前国内外碳化硅晶须的生长机理与制备方法，简要评述了对碳化 硅晶须研究的进展状况。
2.
Carbon nanotubes (CNTs) and silicon carbide whiskers (SiCw) are promising reinforcement materials for manufacturing metal or ceramic based composites.
在制备复合材料中,碳纳米管和碳化硅晶须易受到空气和基体材料侵蚀而失效。
4) SiC Whiskers
碳化硅晶须
1.
The growth of SiC whiskers by in-situ on the surface of SiC foam ceramics;
泡沫碳化硅陶瓷表面原位生长碳化硅晶须
2.
Using silica micro-powder,quartz sand and kaolin as raw material of silicon,graphite with different particle size as raw material of carbon,Fe2O3、H3BO3 and NaCl as catalyst,SiC whiskers were synthesized by the carbothermal reduction reaction.
分别以SiO2微粉、石英砂和高岭土为硅源,用不同粒度的石墨为碳源,Fe2O3、H3BO3和NaCl作为催化剂,采用碳热还原法制备了碳化硅晶须。
3.
The dispersion of carbon black in silica sol and SiC whiskers synthesized by sol-gel method were studied.
本文研究了炭黑在硅溶胶中的分散以及溶胶-凝胶法制备了碳化硅晶须,同时也研究炭黑在酚醛树脂中的分散及各种改性树脂的制备,探讨了改性树脂对低碳镁碳砖性能的影响。
5) silicon carbide platelets
碳化硅晶片
6) silicon carbide platelet
碳化硅片晶
补充资料：碳化硅晶须补强碳化硅陶瓷基复合材料
分子式：
CAS号：
性质：以碳化硅陶瓷为基和以碳化硅晶须为增强剂的新型陶瓷材料。通过晶须的载荷转移、拔出及裂纹偏转作用，获得比普通碳化硅更高的强度和韧性。使用温度达1400℃。是一种重要的高温结构陶瓷。用于燃气轮机叶片等高温部件和耐磨件制造。采用原位生长工艺和烧结工艺制取。
CAS号：
性质：以碳化硅陶瓷为基和以碳化硅晶须为增强剂的新型陶瓷材料。通过晶须的载荷转移、拔出及裂纹偏转作用，获得比普通碳化硅更高的强度和韧性。使用温度达1400℃。是一种重要的高温结构陶瓷。用于燃气轮机叶片等高温部件和耐磨件制造。采用原位生长工艺和烧结工艺制取。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条